1
Yasuo Okuno: Light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 3, 1981: US04298869 (396 worldwide citation)

A plurality of light-emitting diodes are connected in series to elevate the working voltage. A plurality of said series connection are connected in parallel to maintain display even upon a disconnection accident. The total number of light-emitting diodes provides a bright and failure-safe colored li ...


2
Jun ichi Nishizawa, Yasuo Okuno, Keishiro Takahashi: Light-responsive light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, May 11, 1982: US04329625 (276 worldwide citation)

A light-responsive light-emitting diode display comprises a light-emitting diode circuit including a series connection of light-emitting diodes and a light-responsive current-controlling circuit connected in series to said light-emitting diode circuit for supplying a current thereto in correspondenc ...


3
Jun ichi Nishizawa, Kazuomi Ito, Yasuo Okuno: Method of fabricating a semiconductor pn junction. Jun Ichi Nishizawa, Cushman Darby & Cushman, July 2, 1985: US04526632 (15 worldwide citation)

A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liqui ...


4
Yasuo Okuno: System for controlling terminal equipment. Sharp Kabushiki Kaisha, February 23, 1993: US05189409 (11 worldwide citation)

A terminal equipment control system which controls the operation state of multiple terminals having data communication with master equipment. A control signal of a specified duration is output from the master equipment to each of a plurality of multiple terminals, and the duration of the each contro ...


5
Yasuo Okuno, Hitoshi Tamura, Tsuyoshi Maruyama: Wet treatment adapted for mirror etching ZnSe. Stanley Electric, Kanagawa Academy of Science and Technology, Frishauf Holtz Goodman Langer & Chick, August 29, 1995: US05445706 (7 worldwide citation)

Group II-VI compound semiconductor crystal containing Zn as group II element or mixed crystal containing the compound semiconductor crystal is etched by an etchant made of H.sub.2 SO.sub.4 aqueous solution dissolved with potassium permanganate KMNO.sub.4. Preferably, an etchant is moved round in a c ...


6
Yasuo Okuno, Shotaro Tomita, Hiroyuki Kato: Methods for compound semiconductor crystal growth from solution. Stanley Electric, Kanagawa Academy of Science and Technology, Frishauf Holtz Goodman Langer & Chick, March 19, 1996: US05499600 (6 worldwide citation)

A crystal solution growth method for growing a crystal by providing a temperature difference between the higher and lower regions of a solvent, and disposing a source crystal at a high temperature region of the solution and a seed crystal at a low temperature region of the solution. The crystal solu ...


7
Jun ichi Nishizawa, Yasuo Okuno: Apparatus for performing solution growth relying on temperature difference technique. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, January 21, 1986: US04565156 (4 worldwide citation)

A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature and on a mass production scale without deranging the control of the growth temperature applied external ...


8
Michihiro Sano, Yasuo Okuno: Crystal growth of group II-VI compound semiconductor. Stanley Electric, Frishauf Holtz Goodman & Woodward, December 29, 1992: US05174854 (3 worldwide citation)

A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature ...


9
Jun Ichi Nishizawa, Ken Suto, Yasuo Okuno: Process of growing single crystals of gallium phosphide. Semiconductor Research Foundation, Robert E Burns, Emmanuel J Lobato, Bruce L Adams, March 30, 1976: US03947548

A single crystal of gallium phosphide including 0.5 atomic ratio or less of indium is grown from a melt consisting of indium, gallium and phosphorous with an atomic ratio of gallium to phosphorous equal to at least 2.0.