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Hirofumi Fukui, Masanori Miyazaki, Masami Aihara, Chisato Iwasaki, Koichi Fukuda, Yasuhiko Kasama: Single chamber for CVD and sputtering film manufacturing. Alps Electric, Guy W Shoup, May 26, 1998: US05755938 (63 worldwide citation)

An apparatus which allows a first film to be formed on a substrate by chemical vapor deposition (CVD) and a second film to be formed on the substrate by sputtering, wherein the processes are performed sequentially in the same deposition chamber without exposing the substrate to an oxidative atmosphe ...


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Tadahiro Ohmi, Yasuhiko Kasama, Hirobumi Fukui: Reactive ion etching device. Tadahiro Ohmi, Alps Electric, Baker & Daniels, May 16, 1995: US05415718 (23 worldwide citation)

An object of this invention is to provide an RIE apparatus, for instance, with which conditions for an etching process such as an etching speed can be set easily, precisely, and with repeatability, by, for instance, introducing a novel concept that is the flow rate of charged particles which can dir ...


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Kazuya Okabe, Hideyuki Matsuda, Yasuhiko Kasama, Hiroyuki Hebiguchi: Thin film transistor array incorporating a shorted circuit bypass technique. Alps Electric, Guy W Shoup, Paul J Winters, Stephen L Malaska, January 16, 1990: US04894690 (23 worldwide citation)

A thin film transistor array includes a gate bus and a source bus intersecting with each other at right angles, a thin film transistor pair disposed adjacent to the intersecting point and electrically connected to the two buses. If a short circuit is detected between the two buses, the gate bus or t ...


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Koichi Fukuda, Tomofumi Oba, Masanori Miyazaki, Hirofumi Fukui, Chisato Iwasaki, Yasuhiko Kasama, Tadahiro Ohmi, Masaru Kubota, Hitoshi Kitagawa, Akira Nakano, Osamu Yoshida: Method of sputtering a silicon nitride film. Frontec Incorporated, Tadahiro Ohmi, Guy W Shoup, Patrick T Bever, August 27, 1996: US05550091 (19 worldwide citation)

There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surf ...


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Kenichi Mitsumori, Yasuhiko Kasama, Koji Yamanaka, Takashi Imaoka, Tadahiro Ohmi: Wet treatment method. Organo Corporation, Tadahiro Ohmi, Fish & Richardson P C, July 21, 1998: US05783790 (19 worldwide citation)

A surfactant is added to anodic or cathodic water obtained by electrolyzing deionized water or high-purity water. Then, an object of treatment is treated with the anodic or cathodic water containing the surfactant. The object of treatment may be treated, in this way, while irradiating it with an ult ...


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Matagoro Maeno, Masayuki Miyashita, Hirohisa Kikuyama, Tatsuhiro Yabune, Jun Takano, Hirofumi Fukui, Satoshi Miyazawa, Chisato Iwasaki, Tadahiro Ohmi, Yasuhiko Kasama, Hitoshi Seki: Etching agent, electronic device and method of manufacturing the device. Frontec Incorporated, Tadahiro Ohmi, Guy W Shoup, February 3, 1998: US05714407 (19 worldwide citation)

An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 ...


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Akira Nakano, Sung Chul Kim, Koichi Fukuda, Yasuhiko Kasama, Tadahiro Ohmi, Shoichi Ono: Plasma processing apparatus. Alps Electric, Brinks Hofer Gilson & Lione, August 7, 2001: US06270618 (16 worldwide citation)

A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber with ...


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Hitoshi Seki, Satoshi Miyazawa, Tadahiro Ohmi, Kazuko Ogino, Akira Abe, Tsutomu Nakamura, Hirofumi Fukui, Yasuhiko Kasama: Etchant, detergent and device/apparatus manufacturing method. Alps Electric, Guy W Shoup, Patrick T Bever, April 25, 1995: US05409569 (15 worldwide citation)

An etchant which generates neither heat nor gas during the process, does not sublimate, is stable for a long period of time, requires no special pipings, and further requires no special treatment of waste water because of containing no organic solvents. The etchant is a solution containing hydrofluo ...


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Hiroyuki Hebiguchi, Yasuhiko Kasama: Liquid crystal display device. Frontec Incorporated, Brinks Hofer Gilson & Lione, October 24, 2000: US06137557 (15 worldwide citation)

In the liquid crystal display device of the invention, a liquid crystal layer is formed between a pair of transparent substrates, a plurality of linear electrodes which make a pair are disposed in a spaced, opposed relation on the liquid crystal layer side of one substrate, a switching element for a ...



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