1
Yasuaki Yoshida: Semiconductor laser device. Mitsubishi Electric Corporation, Leydig Voit & Mayer, June 30, 2009: US07555025 (108 worldwide citation)

A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on t ...


2
Yasuaki Yoshida, Yasuo Nakajima, Masao Aiga: Semiconductor laser array device, semiconductor laser device, and production methods therefor. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, March 19, 1996: US05500869 (29 worldwide citation)

A semiconductor laser array device includes a semiconductor laser chip array including a plurality of laser chips each having a prescribed chip width mounted on a bar-shaped supporting substrate and arranged parallel to a length direction of the substrate and determined in position in the optical ax ...


3
Yasuaki Yoshida, Akira Takemoto: Semiconductor laser device. Mitsubishi Denki Kabushiki Kaishi, Leydig Voit & Mayer, December 3, 1996: US05581570 (15 worldwide citation)

A semiconductor laser device includes semiconductor layers including an active layer and cladding layers sandwiching the active layer and current injecting structure for regulating a region in the active layer into which current is injected. A light confinement coefficient in the current injection r ...


4
Yasuaki Yoshida: Charge skimming solid-state image array circuit and method including individual photosensor compensation. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, March 26, 1991: US05003565 (13 worldwide citation)

A solid state imaging array for generating a plurality of electrical imaging signals includes photodiodes for producing electrical charges in response to incident light, a signal processing circuit including a charge skimming electrode associated with each sensor for receiving and storing electrical ...


5
Motoharu Miyashita, Hirotaka Kizuki, Yasuaki Yoshida, Yutaka Mihashi, Yasutomo Kajikawa, Shoichi Karakida, Yuji Ohkura: Semiconductor laser device and method of fabricating semiconductor laser device. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, November 10, 1998: US05835516 (12 worldwide citation)

A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and fo ...


6
Yasuaki Yoshida: Simulation method for semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, December 1, 1998: US05844822 (8 worldwide citation)

A method for simulating and analyzing two-dimensional current and light distributions of a semiconductor laser including an active layer, a cladding layer, and a light absorbing layer includes obtaining initial values of light distribution and carrier distribution, setting a bias condition, and perf ...


7
Go Sakaino, Yasuaki Yoshida: Infrared imaging array. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, April 19, 1994: US05304803 (7 worldwide citation)

An infrared imaging array includes a plurality of photodetectors arranged in a two-dimensional array. A first charge read-out gate is associated with each photodetector and reads out electrical charges from the associated photodetector receiving first charge read-out clock pulses output from a verti ...


8
Yasuaki Yoshida: Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, December 6, 1994: US05371352 (7 worldwide citation)

A photodetector includes a light responsive element including a semiconductor layer having a plurality of first spaced apart p-n junctions for generating electrical signals in response to incident light, a test element group (TEG) for testing an electrical characteristic of the first p-n junctions, ...


9
Norimasa Kumada, Yoshihiro Hisa, Yasuaki Yoshida: Solid-state hybrid infrared imaging device. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, December 1, 1992: US05168338 (7 worldwide citation)

A solid-state imaging device includes a photodiode array having a plurality of pixels, each pixel including a second conductivity type region formed in a first conductivity type semiconductor layer, an electrode common to all the pixels and disposed on the first conductivity type semiconductor layer ...


10
Yasuaki Yoshida: Infrared ray detector. Mitisubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, November 14, 1989: US04880979 (5 worldwide citation)

An infrared ray detector includes, an infrared ray detection element farbicated in a water which is produced by growing a semiconductor responsive to infrared ray on a high resistance substrate, a metal submount provided with two lead terminals insulated from each other, to which submount the infrar ...