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Jie Liu, Xikun Wang, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Tungsten oxide processing. Applied Materials, Kilpatrick Townsend & Stockton, February 10, 2015: US08951429 (87 worldwide citation)

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents fr ...


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Xikun Wang, Anchuan Wang, Nitin K Ingle, Dmitry Lubomirsky: Selective titanium nitride removal. Applied Materials, Kilpatrick Townsend & Stockton, May 26, 2015: US09040422 (86 worldwide citation)

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The met ...


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Xikun Wang, Ching Mei Hsu, Nitin K Ingle, Zihui Li, Anchuan Wang: Dry-etch for selective tungsten removal. Applied Materials, Kilpatrick Townsend & Stockton, March 17, 2015: US08980763 (85 worldwide citation)

Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma efflu ...


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Xikun Wang, Jie Liu, Anchuan Wang, Nitin K Ingle: Even tungsten etch for high aspect ratio trenches. Applied Materials, Kilpatrick Townsend & Stockton, November 17, 2015: US09190293 (81 worldwide citation)

Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking throug ...


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Seung Park, Xikun Wang, Jie Liu, Anchuan Wang, Sang jin Kim: Gas-phase tungsten etch. Applied Materials, Kilpatrick Townsend & Stockton, March 29, 2016: US09299575 (59 worldwide citation)

Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processi ...


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Xikun Wang, Lin Xu, Anchuan Wang, Nitin K Ingle: Titanium oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, March 15, 2016: US09287134 (54 worldwide citation)

Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from t ...


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Xikun Wang, Anchuan Wang, Nitin K Ingle: Aluminum oxide selective etch. Applied Materials, Kilpatrick Townsend & Stockton, March 29, 2016: US09299583 (54 worldwide citation)

Methods of selectively etching aluminum oxide from the surface of a patterned substrate are described. The etch selectively removes aluminum oxide relative to other metal oxides and silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The me ...


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Nitin K Ingle, Jessica Sevanne Kachian, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W Anthis: Selective etch for metal-containing materials. Applied Materials, Kilpatrick Townsend & Stockton, March 29, 2016: US09299582 (54 worldwide citation)

Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods inc ...


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Xikun Wang, Anchuan Wang, Nitin K Ingle: V trench dry etch. Applied Materials, Kilpatrick Townsend & Stockton, May 31, 2016: US09355856 (50 worldwide citation)

Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor includin ...