1
Xiangfeng Duan, Hugh Daniels, Chunming Niu, Vijendra Sahi, James Hamilton, Linda T Romano: Methods of positioning and/or orienting nanostructures. Nanosys, Matthew B Murphy, Andrew L Filler, March 29, 2005: US06872645 (178 worldwide citation)

Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfac ...


2
Charles M Lieber, Xiangfeng Duan, Yu Huang, Ritesh Agarwal: Nanoscale coherent optical components. President & Fellows of Harvard College, Wolf Greenfield & Sacks, August 7, 2007: US07254151 (95 worldwide citation)

This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, a ...


3
Yaoling Pan, Xiangfeng Duan, Robert S Dubrow, Jay L Goldman, Shahriar Mostarshed, Chunming Niu, Linda T Romano, Dave Stumbo: Systems and methods for nanowire growth and harvesting. Nanosys, Sterne Kessler Goldstein and Fox PLLC, Andrew L Filler, September 12, 2006: US07105428 (94 worldwide citation)

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention ...


4
Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T Romano, Jian Chen, Vijendra Sahi, Lawrence A Bock, David P Stumbo, J Wallace Parce, Jay L Goldman: Large-area nanoenabled macroelectronic substrates and uses therefor. Nanosys, Andrew L Filler, June 20, 2006: US07064372 (85 worldwide citation)

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semic ...


5
Xiangfeng Duan, Chunming Niu, Stephen A Empedocles, Linda T Romano, Jian Chen, Vijendra Sahi, Lawrence A Bock, David P Stumbo, Parce J Wallace, Jay L Goldman: Large-area nanoenabled macroelectronic substrates and uses therefor. Nanosys, Andrew L Filler, November 14, 2006: US07135728 (77 worldwide citation)

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semic ...


6
Charles M Lieber, Yi Cui, Xiangfeng Duan, Yu Huang: Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices. President & Fellows of Harvard College, Wolf Greenfield & Sacks, May 1, 2007: US07211464 (65 worldwide citation)

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at lea ...


7
Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J Wallace Parce, Jay L Goldman: Large-area nonenabled macroelectronic substrates and uses therefor. Nanosys, Sterne Kessler Goldstein & Fox PLLC, Andrew L Filler, June 27, 2006: US07067867 (62 worldwide citation)

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semic ...


8
Charles M Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C Smith, Deli Wang, Zhaohui Zhong: Nanoscale wires and related devices. President and Fellows of Harvard College, Wolf Greenfield & Sacks PC, November 27, 2007: US07301199 (59 worldwide citation)

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires ca ...


9
Stephen A Empedocles, David P Stumbo, Chunming Niu, Xiangfeng Duan: Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites. Nanosys, Andrew L Filler, August 1, 2006: US07083104 (48 worldwide citation)

Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is f ...


10
Xiangfeng Duan, Chunming Niu, Stephen A Empedocles, Linda T Romano, Jian Chen, Vijendra Sahi, Lawrence A Bock, David P Stumbo, Parce J Wallace, Jay L Goldman: Large-area nanoenabled macroelectronic substrates and uses therefor. Nanosys, Andrew L Filler, June 19, 2007: US07233041 (33 worldwide citation)

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semic ...



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