1
Woo Young So, Kyung Jin Yoo, Sang Il Park: Method of manufacturing CMOS thin film transistor. Samsung SDI, Staas & Halsey, June 22, 2004: US06753235 (29 worldwide citation)

A method of manufacturing a CMOS TFT including forming first and second semiconductor layers on an insulating substrate using a first mask, respectively, the substrate having first and second regions, the first semiconductor layer formed on the first region, the second semiconductor layer formed on ...


2
Woo Young So: Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same. Samsung SDI, Staas & Halsey, November 9, 2004: US06815267 (15 worldwide citation)

A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode w ...


3
Woo Young So: Thin film transistor and method of manufacturing the same. Samsung SDI Co, McGuireWoods, March 16, 2004: US06706573 (10 worldwide citation)

A method of manufacturing a thin film transistor that provides high electric field mobility is disclosed. The method comprising: a) forming an amorphous silicon layer and a blocking layer on an insulating substrate; b) forming a photoresist layer having first and second photoresist patterns on the b ...


4
Woo Young So, Kyung Jin Yoo, Sang Il Park: Thin film transistor and manufacturing method thereof, and active matrix display device and manufacturing method thereof. Samsung Mobile Display, Stein McEwen & Bui, February 10, 2009: US07488982 (8 worldwide citation)

A method of manufacturing a thin film transistor (TFT) which is manufactured such that source and drain electrodes directly contact source and drain regions without contact holes.


5
Woo Young So: Method of fabricating a thin film transistor with multiple gates using metal induced lateral crystallization. Samsung SDI, Stein McEwen & Bui, September 26, 2006: US07112475 (7 worldwide citation)

A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode w ...


6
Woo Young So: CMOS thin film transistor. Samsung SDI, Stein McEwen & Bui, August 23, 2005: US06933526 (7 worldwide citation)

A CMOS thin film transistor having a semiconductor layer formed in a zigzag form on an insulating substrate, and a PMOS transistor region and an NMOS transistor region and a gate electrode having at least one slot crossing the semiconductor layer, wherein the semiconductor layer has an MILC surface ...


7
Peter Levermore, Woo Young So, Michael Weaver, Michael Hack: RGBW OLED display for extended lifetime and reduced power consumption. Universal Display Corporation, Sterne Kessler Goldstein & Fox PLLC, August 6, 2013: US08502445 (7 worldwide citation)

A first device is provided that includes a first light source that has at least one organic light emitting device that may emit near white light having a correlated color temperature (CCT) that is less than 6504K. The first device may also have a plurality of pixels comprising a first sub-pixel havi ...


8
Woo Young So, Kyung Jin Yoo, Sang Il Park: Thin film transistors with dual layered source/drain electrodes and manufacturing method thereof, and active matrix display device and manufacturing method thereof. Samsung SDI, McGuireWoods, February 17, 2004: US06692997 (6 worldwide citation)

The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering the semiconductor layer; c) forming a gate el ...


9
Woo Young So: Thin film transistor with multiple gates using metal induced lateral crystalization and method of fabricating the same. Samsung SDI, Stein McEwen & Bui, February 21, 2006: US07001802 (5 worldwide citation)

A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode w ...


10
Woo Young So: OLED display architecture with improved aperture ratio. Universal Display Corporation, Kilpatrick Townsend & Stockton, December 11, 2012: US08330152 (4 worldwide citation)

A device such as a display region that includes a plurality of multi-color pixels is provided. Each pixel may have several types of organic light emitting devices that operate as sub-pixels, and at least one type of device may be shared by multiple pixels. Less-used and/or more efficient device type ...