1
Jung hyun Lee, Young soo Park, Won tae Lee: Semiconductor memory device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, January 16, 2007: US07164147 (129 worldwide citation)

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion in ...


2
Yo Hee Kim, Kwan Ho Kim, Won Tae Lee, Jae Jo Lee: Signal coupling apparatus for communication by medium voltage power line. Korea Electro Technology Research Institute, Robert E Bushnell Esq, June 22, 2004: US06753742 (23 worldwide citation)

A signal coupling apparatus for communication by a medium voltage power line comprises a housing with an inner cavity; an electrode formed on one edge of the housing, one end of the electrode connected to an external medium voltage lead line; a coupling capacitor formed within the cavity and connect ...


3
Won tae Lee, Wong bong Choi, In taek Han, Jeong hee Lee, Se gi Yu: Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same. Samsung SDI, Burns Doane Swecker & Mathis L, February 12, 2002: US06346775 (19 worldwide citation)

A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF


4
Young mo Kim, Hidekazu Hatanaka, Won tae Lee, Seoung jae Im, Yoon jung Lee: Plasma display panel using excimer gas. Samsung SDI, Burns Doane Swecker & Mathis L, September 30, 2003: US06628088 (13 worldwide citation)

A plasma display panel using excimer gas is provided. Mixed excimer gases containing xenon (Xe) used to form excimer gas and iodine (I) as a halogen, are injected into the plasma display panel to be used as discharge gases. At least one selected from helium (He), neon (Ne), argon (Ar) and krypton (K ...


5
Won tae Lee: Plasma display panel and method for manufacturing the same. Samsung SDI, Burns Doane Swecker & Mathis L, October 23, 2001: US06307319 (12 worldwide citation)

A plasma display panel (PDP) and a method for manufacturing the same are provided. The plasma display panel (PDP) includes a front substrate and a rear substrate which face each other, upper electrodes and lower electrodes formed on the facing surfaces of the front substrate and the rear substrate i ...


6
Won tae Lee: Plasma accelerating apparatus and plasma processing system having the same. Samsung Electronics, Sughrue Mion PLLC, October 27, 2009: US07609002 (4 worldwide citation)

A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel ...


7
Won tae Lee: Plasma accelerating apparatus and plasma processing system including secondary electron amplification coating layer formed at inner wall of channel. Samsung Electronics, Sughrue Mion PLLC, October 13, 2009: US07602111 (2 worldwide citation)

A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall an ...


8
Soon Woo Lee, Kwan Ho Kim, Young Jin Park, Won Tae Lee, Hae Soo Park: Impulse radio-based ultra wideband (IR-UWB) system using 1-bit digital sampler and bit decision window. Korea Electrotechnology Research Institute, The Webb Law Firm, October 26, 2010: US07822161 (2 worldwide citation)

An impulse radio-based ultra wideband communication system, using an ultra wideband impulse and a 1-bit high-speed digital sampler, includes a transmitting RF module, a receiving RF module, a signal recovery unit, a transmitting signal processor, a receiving signal processor, and an ultra wideband a ...


9
Won tae Lee, You seop Lee: Heating structure with a passivation layer and inkjet printhead including the heating structure. Samsung Electronics, Stanzione & Kim, August 24, 2010: US07780270 (2 worldwide citation)

A heating structure of an inkjet printhead and an inkjet printhead including the heating structure. The heating structure includes a substrate, a heater formed on the substrate, an electrode formed on the heater, a passivation layer formed to cover the heaters and the electrodes, and carbon nanotube ...


10
Won Tae Lee, Hyeong Seok Baek, Ji Hoon Jang, Hang Seok Choi: Switch control circuit and resonant converter including the same. Fairchild Korea Semiconductor, Grossman Tucker Perreault & Pfleger PLLC, May 9, 2017: US09647528 (1 worldwide citation)

A resonant converter includes a first switch coupled between a first node and a primary side ground, a second switch coupled between an input voltage and the first node, at least one capacitor and at least one inductor coupled in series between both ends of the first switch, and a switch control cir ...