1
Jung hyun Lee, Young soo Park, Won tae Lee: Semiconductor memory device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, January 16, 2007: US07164147 (127 worldwide citation)

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion in ...


2
Yo Hee Kim, Kwan Ho Kim, Won Tae Lee, Jae Jo Lee: Signal coupling apparatus for communication by medium voltage power line. Korea Electro Technology Research Institute, Robert E Bushnell Esq, June 22, 2004: US06753742 (23 worldwide citation)

A signal coupling apparatus for communication by a medium voltage power line comprises a housing with an inner cavity; an electrode formed on one edge of the housing, one end of the electrode connected to an external medium voltage lead line; a coupling capacitor formed within the cavity and connect ...


3
Won tae Lee, Wong bong Choi, In taek Han, Jeong hee Lee, Se gi Yu: Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same. Samsung SDI, Burns Doane Swecker & Mathis L, February 12, 2002: US06346775 (19 worldwide citation)

A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF


4
Young mo Kim, Hidekazu Hatanaka, Won tae Lee, Seoung jae Im, Yoon jung Lee: Plasma display panel using excimer gas. Samsung SDI, Burns Doane Swecker & Mathis L, September 30, 2003: US06628088 (13 worldwide citation)

A plasma display panel using excimer gas is provided. Mixed excimer gases containing xenon (Xe) used to form excimer gas and iodine (I) as a halogen, are injected into the plasma display panel to be used as discharge gases. At least one selected from helium (He), neon (Ne), argon (Ar) and krypton (K ...


5
Won tae Lee: Plasma display panel and method for manufacturing the same. Samsung SDI, Burns Doane Swecker & Mathis L, October 23, 2001: US06307319 (12 worldwide citation)

A plasma display panel (PDP) and a method for manufacturing the same are provided. The plasma display panel (PDP) includes a front substrate and a rear substrate which face each other, upper electrodes and lower electrodes formed on the facing surfaces of the front substrate and the rear substrate i ...


6
Won tae Lee: Plasma accelerating apparatus and plasma processing system having the same. Samsung Electronics, Sughrue Mion PLLC, October 27, 2009: US07609002 (4 worldwide citation)

A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel ...


7
Soon Woo Lee, Kwan Ho Kim, Young Jin Park, Won Tae Lee, Hae Soo Park: Impulse radio-based ultra wideband (IR-UWB) system using 1-bit digital sampler and bit decision window. Korea Electrotechnology Research Institute, The Webb Law Firm, October 26, 2010: US07822161 (2 worldwide citation)

An impulse radio-based ultra wideband communication system, using an ultra wideband impulse and a 1-bit high-speed digital sampler, includes a transmitting RF module, a receiving RF module, a signal recovery unit, a transmitting signal processor, a receiving signal processor, and an ultra wideband a ...


8
Jung hyun Lee, Young soo Park, Won tae Lee: Method of fabricating semiconductor memory device. Samsung Electronics, Lee & Morse P C, March 10, 2009: US07501307 (1 worldwide citation)

In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storin ...


9
Won tae Lee: Plasma accelerating apparatus and plasma processing system including secondary electron amplification coating layer formed at inner wall of channel. Samsung Electronics, Sughrue Mion PLLC, October 13, 2009: US07602111 (1 worldwide citation)

A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall an ...


10
Won tae Lee: Neutral beam etching device for separating and accelerating plasma. Samsung Electronics, Sughrue Mion PLLC, September 7, 2010: US07789992 (1 worldwide citation)

A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma ...



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