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Wolfgang Raberg, Ulrich Klostermann: Integrated Circuit, Memory Cell Arrangement, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing a Memory Cell. Slater & Matsil, August 27, 2009: US20090213642-A1

According to an embodiment, an integrated circuit includes a magneto-resistive memory cell. The magneto-resistive memory cell includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic ...


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Florian Schoen, Wolfgang Raberg, Bernhard Winkler, Werner Weber: MEMS Devices and Methods of Manufacture Thereof. Slater & Matsil, December 2, 2010: US20100301434-A1

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating ma ...


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Wolfgang Raberg, Juergen Zimmer: Integrated circuit with magnetic material magnetically coupled to magneto-resistive sensing element. Infineon Technologies, Dicke Billig & Czaja, March 4, 2010: US20100052672-A1

An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. ...


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Markus LOEHNDORF, Wolfgang RABERG, Florian SCHOEN: Silicon mems resonator devices and methods. Infineon Technologies, Patterson Thuente Skaar & Christensen PA, February 25, 2010: US20100045274-A1

Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resisti ...


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Wolfgang Raberg: Magnetoresistive Device and Method for Manufacturing the Same. Infineon Technologies, August 2, 2012: US20120194180-A1

A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer.


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Udo Ausserlechner, Tobias Werth, Peter Slama, Juergen Zimmer, Wolfgang Raberg, Stephan Schmitt, Martin Orasch: Magnetic Encoder Element for Position Measurement. May 5, 2011: US20110101964-A1

A magnetic encoder element for use in a position measurement system including a magnetic field sensor for measuring position along a first direction is disclosed. The encoder element includes at least one first track that includes a material providing a magnetic pattern along the first direction, th ...


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Wolfgang Raberg, Bernhard Winkler: Integrated mems device and control circuit. Dicke Billig & Czaja, October 22, 2009: US20090261416-A1

An integrated circuit includes a silicon-on-insulator (SOI) substrate including a buried oxide layer positioned between a top-side silicon layer and a bottom-side silicon layer. A micro-electromechanical system (MEMS) device is integrated into the top-side silicon layer. A semiconductor layer is for ...


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Juergen Zimmer, Wolfgang Raberg: Xmr sensors with reduced discontinuities. April 26, 2012: US20120098533-A1

Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently orien ...


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Florian Schoen, Wolfgang Raberg, Bernhard Winkler, Werner Weber: Methods of Manufacture MEMS Devices. Infineon Technologies, June 28, 2012: US20120164774-A1

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating ma ...