31
Wolfgang Raberg, Klaus Dieter Ufert: Method of fabricating an integrated electronic circuit with programmable resistance cells. Qimonda, Patterson & Sheridan, July 23, 2013: US08492810

Method of fabricating an integrated electronic circuit with programmable resistance cells, which comprises providing a substrate; forming an inert electrode; forming a solid electrolyte on the inert electrode; forming an interlayer on the solid electrolyte, the interlayer comprising an active electr ...


32
Wolfgang Raberg, Tobias Wurft: Magnetic sensor device having a magneto-resistive structure that generates a vortex magnetization pattern. Infineon Technologies, Harrity & Harrity, June 26, 2018: US10008225

An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. The magneto-resistive structure also compr ...


33
Wolfgang Raberg, Tobias Wurft: Magnetic sensor device having a magneto-resistive structure that generates a vortex magnetization pattern. Infineon Technologies, Harrity & Harrity, May 22, 2018: US09978406

An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. The magneto-resistive structure also compr ...


34
Wolfgang Raberg, Andreas Strasser, Hermann Wendt, Klemens Pruegl: Magnetoresistive devices and methods for manufacturing magnetoresistive devices. Infineon Technologies, Schiff Hardin, May 1, 2018: US09959890

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a fir ...


35
Florian Schoen, Wolfgang Raberg, Bernhard Winkler, Werner Weber: MEMS devices and methods of manufacture thereof. Infineon Technologies, Slater & Matsil L, December 14, 2010: US07851875

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating ma ...


36
Juergen Zimmer, Andreas Strasser, Wolfgang Raberg, Klemens Pruegl: Magnetoresistive devices and methods for manufacturing magnetoresistive devices. Infineon Technologies, Schiff Hardin, April 11, 2017: US09620707

A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.


37
Wolfgang Raberg, Andreas Strasser, Hermann Wendt, Klemens Pruegl: Magnetoresistive devices and methods for manufacturing magnetoresistive devices. Infineon Technologies, Schiff Hardin, February 14, 2017: US09570099

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a fir ...


38
Florian Schön, Wolfgang Raberg, Bernhard Winkler: Integrated binary phase shift keying with silicon MEMS resonators. Infineon Technologies, Eschweiler & Associates, November 3, 2009: US07612627

A modulator includes a micro-electromechanical resonator device configured to receive an input signal and generate two output signals in response thereto, wherein the two signals having a predetermined phase relationship therebetween. The modulator further includes a switching system configured to s ...


39
Frank Findeis, Ihar Kasko, Wolfgang Raberg: Fabrication process for a magnetic tunnel junction device. Slater & Matsil, November 18, 2004: US20040229430-A1

A magnetic random access memory device having a magnetic tunnel junction is provided, as well as methods of fabricating the same. The magnetic tunnel junction includes a first magnetic layer, a second magnetic layer, a tunnel barrier layer, and dielectric material portions. The first magnetic layer ...


40
Daniel Worledge, Ulrich Klostermann, Wolfgang Raberg, Stephen L Brown: Small, scalable resistive element and method of manufacturing. International Business Machines Corporation, Michael J Buchenhorner Esq, Holland & Knight, January 20, 2005: US20050014342-A1

An improved scalable, resistive element for use in a semiconductor device that can be produced with a small feature size and precise resistance is provided by the present invention. The resistive element includes a base layer positioned on top of a metal line. A seed layer of is deposited on top of ...