21
Wolfgang Raberg: Magnetoresistive device and method for manufacturing the same. Infineon Technologies, Eschweiler & Associates, December 20, 2016: US09523747

A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer.


22
Juergen Zimmer, Wolfgang Raberg, Stephan Schmitt: Magnetoresistive devices and methods for manufacturing magnetoresistive devices. Infineon Technologies, Eschweiler & Potashnik, June 27, 2017: US09691970

A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The fi ...


23
Wolfgang Raberg: Magnetoresistive device and method for manufacturing the same. Infineon Technologies, Eschweiler & Associates, October 20, 2015: US09164157

A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer.


24
Wolfgang Raberg: Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy. Infineon Technologies, Eschweiler & Potashnik, April 4, 2017: US09612298

Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetor ...


25
Florian Schoen, Wolfgang Raberg, Bernhard Winkler, Werner Weber: Methods of manufacture MEMS devices. Infineon Technologies, Slater & Matsil L, February 23, 2016: US09266719

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating ma ...


26
Wolfgang Raberg, Cay Uwe Pinnow: Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device. Qimonda, Altis Semiconductor SNC, June 8, 2010: US07732888

According to one embodiment of the present invention, a memory cell array comprises a plurality of voids, the spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the voids.


27
Juergen Zimmer, Wolfgang Raberg, Stephan Schmitt: Magnetoresistive devices and methods for manufacturing magnetoresistive devices. Infineon Technologies, Eschweiler & Associates, January 19, 2016: US09240546

A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The fi ...


28
Wolfgang Raberg, Juergen Zimmer: Integrated circuit with magnetic material magnetically coupled to magneto-resistive sensing element. Infineon Technologies, Dicke Billig & Czaja PLLC, May 8, 2012: US08174260

An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. ...


29
Markus Loehndorf, Wolfgang Raberg, Florian Schoen: Silicon MEMS resonator devices and methods. Infineon Technologies, Patterson Thuente Christensen Pedersen P A, November 1, 2011: US08049490

Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resisti ...


30
Wolfgang Raberg, Klaus Dieter Ufert: Method of fabricating an integrated electronic circuit with programmable resistance cells. Qimonda, Patterson & Sheridan, July 23, 2013: US08492810

Method of fabricating an integrated electronic circuit with programmable resistance cells, which comprises providing a substrate; forming an inert electrode; forming a solid electrolyte on the inert electrode; forming an interlayer on the solid electrolyte, the interlayer comprising an active electr ...