1
Ulrich Klostermann
Stephen L Brown, Arunava Gupta, Ulrich Klostermann, Stuart Stephen Papworth Parkin, Wolfgang Raberg, Mahesh Samant: Magnetic tunnel junctions for MRAM devices. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, December 12, 2006: US07149105 (18 worldwide citation)

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy ...


2
Ulrich Klostermann
Chanro Park, Wolfgang Raberg, Ulrich Klostermann: Memory structure and method of manufacture. Infineon Technologies, Atlis Semiconductor, Slater & Matsil L, September 9, 2008: US07423282 (5 worldwide citation)

A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer.


3
Ulrich Klostermann
Ulrich Klostermann, Chanro Park, Wolfgang Raberg: Memory having cap structure for magnetoresistive junction and method for structuring the same. Altis Semiconductor SNC, Infineone Technologies, Dicke Billig & Czaja PLLC, October 13, 2009: US07602032 (4 worldwide citation)

A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask la ...


4
Ulrich Klostermann
Wolfgang Raberg, Ulrich Klostermann: MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture. Infineon Technologies, ALTIS Semiconductor SNC, August 24, 2010: US07782577

A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.


5
Ulrich Klostermann
Wolfgang Raberg, Ulrich Klostermann: Memory cell using spin induced switching effects. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, May 11, 2010: US07715225

According to an embodiment, an integrated circuit includes a magneto-resistive memory cell. The magneto-resistive memory cell includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic ...


6
Wolfgang Raberg: MTJ stack with crystallization inhibiting layer. Infincon Technologies, Slater & Matsil L, December 20, 2005: US06977181 (102 worldwide citation)

A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a hig ...


7
Michael C Gaidis, David W Abraham, Stephen L Brown, Arunava Gupta, Chanro Park, Wolfgang Raberg: Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory. International Business Machines Corporation, Infineon Technologies, Daryl K Neff, Margaret A Pepper, May 1, 2007: US07211446 (14 worldwide citation)

A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free laye ...


8

9
Gregory Costrini, John Hummel, Kia Seng Low, Igor Kasko, Frank Findeis, Wolfgang Raberg: Spacer integration scheme in MRAM technology. International Business Machines Corporation, Eric Petraske, Margaret A Pepper, January 10, 2006: US06985384 (8 worldwide citation)

A magneto resistive memory device is fabricated by etching a blanket metal stack comprised of a buffer layer, pinned magnetic layer, a tunnel barrier layer and a free magnetic layer. The problem of junction shorting from resputtered metal during the etching process is eliminated by formation of a pr ...


10
Rainer Leuschner, Wolfgang Raberg, Stephen L Brown, Frank Findeis, Sivanandha K Kanakasabapathy, Michael Vieth: Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, March 18, 2008: US07344896 (6 worldwide citation)

Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. ...



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