1
Roger Allen Booth Jr, Jack Allan Mandelman, William Robert Tonti: Semiconductor structures integrating damascene-body FinFETs and planar devices on a common substrate and methods for forming such semiconductor structures. International Business Machines Corporation, Wood Herron & Evans, April 1, 2008: US07352034 (115 worldwide citation)

Methods of forming a semiconductor structure having FinFET's and planar devices, such as MOSFET's, on a common substrate by a damascene approach. A semiconductor fin of the FinFET is formed on a substrate with damascene processing in which the fin growth may be interrupted to implant ions that are s ...


2
Jack Allan Mandelman, William Robert Tonti: Structure incorporating latch-up resistant semiconductor device structures on hybrid substrates. International Business Machines Corporation, Wood Herron & Evans, October 19, 2010: US07818702 (97 worldwide citation)

Device structure embodied in a machine readable medium for designing, manufacturing, or testing a design in which the design structure includes latch-up resistant devices formed on a hybrid substrate. The hybrid substrate is characterized by first and second semiconductor regions that are formed on ...


3
Claude Louis Bertin, Alvar Antonio Dean, Kenneth Joseph Goodnow, Scott Whitney Gould, Wilbur David Pricer, William Robert Tonti, Sebastian Theodore Ventrone: Managing Vt for reduced power using a status table. International Business Machines Corporation, Eugene I Shkurko, Connolly Bove Lodge & Hutz, February 5, 2002: US06345362 (72 worldwide citation)

An integrated circuit includes a CPU, a power management unit and plural functional units each dedicated to executing different functions. The power management unit controls the threshold voltage of the different functional units to optimize power/performance operation of the circuit and intelligent ...


4
Claude Louis Bertin, John A Fifield, Erik Leigh Hedberg, Russell J Houghton, Timothy Dooling Sullivan, Steven William Tomashot, William Robert Tonti: Impedance control using fuses. International Business Machines Corporation, Howard J Walker Jr esq, Scully Scott Murphy & Presser, October 31, 2000: US06141245 (65 worldwide citation)

A system and method for reducing impedance loading of semiconductor integrated circuit devices implementing protective device structures that contributes to impedance loading at an I/O pad connection. The method comprises providing a fuse device between the I/O pad connection and the protective devi ...


5
Darren L Anand, John Edward Barth Jr, John Atkinson Fifield, Pamela Sue Gillis, Peter O Jakobsen, Douglas Wayne Kemerer, David E Lackey, Steven Frederick Oakland, Michael Richard Ouellette, William Robert Tonti: Method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox. International Business Machines Corporation, Richard A Henkler, Bracewell & Patterson L, June 10, 2003: US06577156 (61 worldwide citation)

A method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox allows a reduction in the number of fuses required to repair or customize an integrated circuit and allows fuses to be grouped outside of the macros repaired by the fuses. The remote location of ...


6
Claude Louis Bertin, Gordon Arthur Kelley, Dennis Arthur Schmidt, William Robert Tonti, Jerzy Maria Zalesinski: Coaxial wiring within SOI semiconductor, PCB to system for high speed operation and signal quality. International Business Machines Corporation, Mark F Chadurjian, Scully Scott Murphy & Presser, May 14, 2002: US06388198 (42 worldwide citation)

An integrated circuit that contains a coaxial signal line formed at least partially within a silicon-containing substrate. The coaxial signal line comprises an inner conductor having a length, said length axially surrounded by, and insulated from, an outer conductor along said length. A method of pr ...


7
Claude Louis Bertin, John Joseph Ellis Monaghan, Erik Leigh Hedberg, Terence Blackwell Hook, Jack Allan Mandelman, Edward Joseph Nowak, Wilbur David Pricer, Minh Ho Tong, William Robert Tonti: Switched body SOI (silicon on insulator) circuits and fabrication method therefor. International Business Machines Corporation, John J Goodwin, May 29, 2001: US06239649 (33 worldwide citation)

Circuits with SOI devices are coupled to a body bias voltage via a switch for selectively connecting the body bias voltage signals to the SOI device body. NMOS or PMOS SOI devices are used for the switched body SOI device and a FET is used for the switch and the gate terminal of the SOI device is co ...


8
Claude Louis Bertin, Erik Leigh Hedberg, Timothy Dooling Sullivan, William Robert Tonti: Chip thermal protection device. International Business Machines Corporation, Howard J Walter Jr, Scully Scott Murphy & Presser, April 17, 2001: US06219215 (25 worldwide citation)

A gap conducting structure for an integrated electronic circuit that functions as an electronic fuse device and that is integrated as part of the semi-conductor chip wiring for providing over-current and thermal runaway protection. The gap conducting structure includes one or more air gap regions of ...


9
Claude Louis Bertin, Gordon Arthur Kelley, Dennis Arthur Schmidt, William Robert Tonti, Jerzy Maria Zalesinski: Coaxial wiring within SOI semiconductor, PCB to system for high speed operation and signal quality. International Business Machines Corporation, Scully Scott Murphy & Presser, William D Sabo Esq, September 13, 2005: US06943452 (25 worldwide citation)

An integrated circuit is provided that contains a coaxial signal line formed at least partially within a silicon-containing substrate. The coaxial signal line comprises an inner conductor having a length, said length axially surrounded by, and insulated from, an outer conductor along said length. A ...


10
Roger Allen Booth Jr, Jack Allan Mandelman, William Robert Tonti: Semiconductor structures integrating damascene-body FinFETs and planar devices on a common substrate and methods for forming such semiconductor structures. International Business Machines Corporation, Wood Herron & Evans, February 1, 2011: US07879660 (21 worldwide citation)

Methods of forming a semiconductor structure having FinFET's and planar devices, such as MOSFET's, on a common substrate by a damascene approach, and semiconductor structures formed by the methods. A semiconductor fin of the FinFET is formed on a substrate with damascene processing in which the fin ...