1
William I Lehrer: Method for LPCVD co-deposition of metal and silicon to form metal silicide. Fairchild Camera & Instrument, Ken Olsen, Theodore Scott Park, Michael J Pollock, November 16, 1982: US04359490 (56 worldwide citation)

A low temperature LPCVD process for co-depositing metal and silicon to form metal silicide on a surface such as the surface of a semiconductor integrated circuit wherein the metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium. A reactor which contains the surfac ...


2
John M Pierce, William I Lehrer, Kenneth J Radigan: Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer. Fairchild Camera & Instrument, Paul J Winters, Robert C Colwell, Michael J Pollock, May 12, 1981: US04267012 (46 worldwide citation)

A process for patterning regions on a semiconductor structure comprises the steps of forming a first layer of an alloy of tungsten and titanium on the semiconductor structure, forming a conductive layer of aluminum or chemically similar material on the surface of the tungsten-titanium alloy, removin ...


3
William I Lehrer: Multilayer metal silicide interconnections for integrated circuits. Fairchild Camera & Instrument Corporation, Kenneth Olsen, Michael J Pollock, Carl L Silverman, August 16, 1983: US04398335 (40 worldwide citation)

A process and resulting structure are disclosed for forming vias in integrated circuit structures using metal silicide interconnections. A lower conductor is formed by sequentially depositing silicon and a refractory metal which reacts with the silicon to create a layer of metal silicide. A subseque ...


4
John M Pierce, William I Lehrer: Method and apparatus for low pressure chemical vapor deposition. Fairchild Camera Instrument, Carl L Silverman, David H Carroll, William H Murray, October 28, 1986: US04619844 (25 worldwide citation)

A method of introducing a controlled flow of vapor from a high pressure sublimation chamber into a low pressure vapor deposition reactor, said vapor being derived from solid source material preferably, but not necessarily, having a vapor pressure above about one (1) Torr at a temperature not exceedi ...


5
William I Lehrer, Bruce E Deal: Binary germanium-silicon interconnect and electrode structure for integrated circuits. Fairchild Camera and Instrument, Kenneth Olsen, Carl L Silverman, Alan H MacPherson, April 10, 1984: US04442449 (24 worldwide citation)

An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. ...


6
William I Lehrer: Stress relieved intermediate insulating layer for multilayer metalization. Fairchild Camera & Instrument, Carl Silverman, David Carroll, Ronald Fish, March 31, 1987: US04654269 (23 worldwide citation)

There is disclosed herein a stress relieved intermediate insulating layer consisting of one or more layers of spun-on glass lying over a metalization pattern. The spun-on layers are allowed to crack from thermal stress imposed upon the structure. The cracks in the spun-on layers are then filled with ...


7
William I Lehrer: Multilayer metal silicide interconnections for integrated circuits. Fairchild Camera & Instrument, Kenneth Olsen, Ronald Craig Fish, Carl L Silverman, December 11, 1984: US04488166 (22 worldwide citation)

A process and resulting structure are disclosed for forming vias in integrated circuit structures using metal silicide interconnections. A lower conductor is formed by sequentially depositing silicon and a refractory metal which reacts with the silicon to create a layer of metal silicide. A subseque ...


8
William I Lehrer: Formation of patterned film over semiconductor structure. Fairchild Camera and Instrument Corporation, Kenneth Olsen, Robert C Colwell, Carl L Silverman, December 13, 1983: US04420365 (18 worldwide citation)

A novel process is disclosed for the selective etching of a protective layer over a substrate according to a predetermined pattern, which does not involve the use of chemical vapor deposition or vacuum techniques. The process incorporates the techniques of electroless metal deposition after first ap ...


9
William I Lehrer: Germanosilicate spin-on glasses. National Semiconductor Corporation, Lee Patch, Robert C Colwell, Vernon A Norviel, June 19, 1990: US04935095 (16 worldwide citation)

A process is disclosed for forming a planarized or smooth surface binary glass insulating film comprised of germanium dioxide and silicon dioxide by a spin-on process. The resulting structure has a film thickness uniformity which varies less than 5% over the surface of the wafer. The structure is fo ...


10
William I Lehrer: Method for forming a low temperature binary glass. Fairchild Camera and Instrument Corporation, Kenneth Olsen, Carl L Silverman, Alan H MacPherson, November 29, 1983: US04417914 (15 worldwide citation)

The method of the invention provides a thin film deposit of a binary glass for use in integrated circuits which binary glass has a softening or flow point far below temperatures at which glasses normally used in connection with integrated circuits flow. After the binary glass has been deposited (on ...