1
William D Miller, Gary L Harrington, Lawrence M Fullerton: Storage of compressed data on random access storage devices. Ceram, John G Graham, August 17, 1993: US05237460 (181 worldwide citation)

A random-access type storage device such as a hard disk or semiconductor memory is formatted to provide multiple partitions of varying block size. The data to be stored is in blocks of fixed size, and these blocks are compressed if the compressed size fits in the block size of a small-block partitio ...


2
William D Miller, Joseph T Evans, Wayne I Kinney, William H Shepherd: Ferroelectric capacitor and memory cell including barrier and isolation layers. National Semiconductor Corporation, Richards Medlock & Andrews, September 3, 1991: US05046043 (138 worldwide citation)

A ferroelectric capacitor structure is designed for fabrication together with MOS devices on a semiconductor substrate. The ferroelectric capacitor includes a diffusion barrier layer above the surface of the substrate for preventing the materials of the ferroelectric capcacitor from contaminating th ...


3
William D Miller, Gary L Harrington, Larry M Fullerton, E J Weldon Jr, Chris M Bellman: Data compression and decompression using memory spaces of more than one size. Alfred P Gnadinger, Davis Graham & Stubbs, May 6, 1997: US05627995 (127 worldwide citation)

A method for storing data in a memory, including compressing fixed-sized pages of data, and storing the compressed pages into available smaller memory spaces on a medium if the compressed page will fit into such space, or storing the compressed pages onto available larger memory spaces on the medium ...


4
William D Miller, Gary L Harrington, Lawrence M Fullerton, E J Weldon Jr, Christopher M Bellman: Solid-state RAM data storage for virtual memory computer using fixed-sized swap pages with selective compressed/uncompressed data store according to each data size. Ceram, February 6, 1996: US05490260 (85 worldwide citation)

A computer using virtual memory management employs a random-access type storage device such as a semiconductor memory for page swapping. The semiconductor memory is formatted to provide multiple partitions of varying block size, e.g., two block sizes, for compressed pages, and another block size for ...


5
Thomas M Mnich, William D Miller: Dynamic random access memory with operational sleep mode. Micron Technology, Susan B Collier, November 16, 1993: US05262998 (60 worldwide citation)

A dynamic memory device exhibits a sleep mode of operation, entered in response to a single externally-applied signal which need not be cycled. While in this sleep mode, the device does not respond to or require any of the usual DRAM control signals such a RAS, CAS, write enable, address inputs, dat ...


6
Michael W Saunders, Rolf E Carlson, William D Miller: System and method for connecting gaming devices to a network for remote play. Legal iGaming, Knobbe Martens Olson & Bear, January 25, 2011: US07877798 (51 worldwide citation)

A system and method for connecting remote player devices to regulated host gaming devices in a network to provide remote game play. A host gaming device is configured to provide game information to a plurality of remote player devices to allow remote play of the host game device. Whether each remote ...


7
William D Miller, Leo N Chapin, Joseph T Evans Jr: Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films. National Semiconductor Corporation, Richards Medlock & Andrews, August 7, 1990: US04946710 (45 worldwide citation)

A method to produce thin films suitable for fabricating ferroelectric thin films. The method provides for selection of the predetermined amounts of lead, lanthanum, zirconium, and titanium precursors which are soluble in different solvents. Dissolving predetermined amounts of the precursors in their ...


8
William D Miller, Leo N Chapin, Joseph T Evans Jr: Method for preparing plzt, pzt and plt sol-gels and fabricating ferroelectric thin films. National Semiconductor Corporation, Richards Medlock & Andrews, July 2, 1991: US05028455 (43 worldwide citation)

A method to produce thin films suitable for fabricating ferroelectric thin films. The method provides for selection of the predetermined amounts of lead, lanthanum, zirconium, and titanium precursors which are soluble in different solvents. Dissolving predetermined amounts of the precursors in their ...


9
William D Miller, Joseph T Evans, Wayne I Kinney, William H Shepherd: Fabrication of ferroelectric capacitor and memory cell. National Semiconductor Corporation, Richards Medlock & Andrews, July 16, 1996: US05536672 (39 worldwide citation)

A ferroelectric capacitor structure is designed for fabrication together with MOS devices on a semiconductor substrate. The ferroelectric capacitor includes a diffusion barrier above the surface of the substrate for preventing the materials of the ferroelectric capacitor from contaminating the subst ...


10
Gary L Harrington, Thomas M Mnich, William D Miller: High speed lossless data compression method and apparatus using side-by-side sliding window dictionary and byte-matching adaptive dictionary. CERAM Incorporated, Beaton & Folsom, December 5, 1995: US05473326 (37 worldwide citation)

A data compression and decompression method and apparatus utilizing a sliding window dictionary in combination with an adaptive dictionary. Incoming data moves through a buffer and is compared against both the sliding window dictionary and the adaptive dictionary, and matched data is replaced with a ...