1
Andrew T Hunt, Tzyy Jiuan Hwang, Helmut G Hornis, Wen Yi Lin: Formation of thin film capacitors. MicroCoating Technologies, March 27, 2001: US06207522 (79 worldwide citation)

Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, ...


2
Wen Yi Lin: Shower head assembly. Holland & Hart, January 19, 1999: US05860599 (71 worldwide citation)

A shower head assembly includes a housing including a first end portion engaged with a water outlet cap and a second end portion connected to a water source. The water outlet cap defines a plurality of outer nozzles arranged in a circular manner and a plurality of inner nozzles arranged in a circula ...


3
Andrew T Hunt, Wen Yi Lin, Tzyy Jiuan Hwang, Michelle Hendrick, Helmut G Hornis: Formation of thin film capacitors. MicroCoating Technologies, Wayne E Nacker, Alfred H Muratori, S Matthew Cairns, August 13, 2002: US06433993 (61 worldwide citation)

Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, ...


4
Andrew T Hunt, Wen Yi Lin, Richard W Carpenter: Nanolaminated thin film circuitry materials. MicroCoating Technologies, Wayne E Nacker, Alfred H Muratori, Darryl P Frickey, April 3, 2001: US06212078 (56 worldwide citation)

Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed ...


5
Andrew T Hunt, Tzyy Jiuan Hwang, Helmut G Hornis, Wen Yi Lin: Formation of thin film capacitors. Shipley Company L L C, S Matthew Cairns, April 27, 2004: US06728092 (49 worldwide citation)

Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, ...


6
Wen Yi Lin, Robert F Speyer, Tom R Shrout, Wesley S Hackenberger: Ceramic compositions for microwave wireless communication. Georgia Tech Research Corporation, Thomas Kayden Horstemeyer & Risley L, March 7, 2000: US06034015 (37 worldwide citation)

A composition of Ba.sub.2 Ti.sub.9 O.sub.20 suitable for use in microwave wireless communications is provided. Ba.sub.2 Ti.sub.9 O.sub.20 doped with Zr is formed by combining starting materials containing barium, titanium and zirconium. In a preferred embodiment of the invention, zirconium-doped Ba. ...


7
Wen Yi Lin, Ming Chih Yew, Cheng Yi Hong, Po Yao Lin, Kuo Chuan Liu: Semiconductor device package and method. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, January 27, 2015: US08941248 (21 worldwide citation)

Various packages and methods of forming packages are disclosed. In an embodiment, a package includes a hybrid encapsulant encapsulating a chip attached to a substrate. The hybrid encapsulant comprises a first molding compound and a second molding compound that has a different composition than the fi ...


8
Andrew T Hunt, Tzyy Jiuan Hwang, Helmut G Hornis, Hong Shao, Joe Thomas, Wen Yi Lin, Shara S Shoup, Henry A Luten, John Eric McEntyre: Precursor solution compositions for electronic devices using CCVD. Morton International Incorporated, February 27, 2001: US06193911 (20 worldwide citation)

Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive ...


9
Andrew T Hunt, Wen Yi Lin, Shara S Shoup, Richard W Carpenter, Stephen E Bottomley, Tzyy Jiuan Hwang, Michelle Hendrick: Formation of thin film resistors. Microcoating Technologies, Wayne E Nacker, Alfred H Muratori, Darryl P Frickey, December 11, 2001: US06329899 (19 worldwide citation)

A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etch ...


10
Andrew T Hunt, Wen Yi Lin, Shara S Shoup, Richard W Carpenter, Stephen E Bottomley, Tzyy Jiuan Hwang, Michelle Hendrick: Formation of thin film resistors. Morton International, Al Muratori, Wayne E Nacker, S Matthew Cairns, December 31, 2002: US06500350 (16 worldwide citation)

A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etch ...