1
Wen Cheng Chang: Cable tightening device with a base having a lower cost of fabrication. Alan Kamrath, Kamrath & Associates PA, January 26, 2010: US07651072 (17 worldwide citation)

A cable tightening device includes a fixed unit including a base, a rotation member rotatably mounted on a first end of the base, a movable unit including a movable member rotatably mounted on the rotation member and movable relative to the base, and a holding member secured on a second end of the b ...


2
Wen Cheng Chang: Cable tightening device having anti-theft function. Alan Kamrath, Kamrath & Associates PA, November 11, 2008: US07448596 (17 worldwide citation)

A cable tightening device includes a fixed unit, a rotation member rotatably mounted on the fixed unit, a movable unit including a movable member to drive the rotation member and a release member to lock or unlock the movable member, and a locking unit to lock the release member onto the movable mem ...


3
Sen Fu Chen, Wen Cheng Chang, Heng Hsin Liu, Bao Ru Yang: Method of monitoring and controlling a silicon nitride etch step. Taiwan Semiconductor Manufacturing Company, George O Saile, Larry J Prescott, June 17, 1997: US05639342 (13 worldwide citation)

A patterned silicon nitride layer formed over a semiconductor integrated circuit wafer having a layer of pad oxide is often used as a mask for subsequent processing steps. Etching of the silicon nitride layer is difficult to control and can create defects in the pad oxide layer which are difficult t ...


4
Wen Cheng Chang, Bao Min Ma, Qun Chen, Charles O Bounds: High performance iron-rare earth-boron-refractory-cobalt nanocomposite. Santoku Corporation, Stevens Davis Miller & Mosher, March 5, 2002: US06352599 (13 worldwide citation)

Magnetic nanocomposite materials including iron, rare earth elements, boron, refractory metals and cobalt which have favorable magnetic properties and are suitable for making bonded magnets are disclosed. Compositions of the present invention can be of the formula: (N


5
Yu Ming Tsui, Wen Cheng Chang, Shung Jen Yu, Sheng Yih Ting: Method for making high-sheet-resistance polysilicon resistors for integrated circuits. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, April 25, 2000: US06054359 (11 worldwide citation)

A high-sheet-resistance polysilicon resistor for integrated circuits is achieved by using a two-layer polysilicon process. After forming FET gate electrodes and capacitor bottom electrodes from a polycide layer, a thin interpolysilicon oxide (IPO) layer is deposited to form the capacitor interelectr ...


6
Bao Min Ma, Charles O Bounds, Wen Cheng Chang, Qun Chen: Iron-rare earth-boron-refractory metal magnetic nanocomposites. Santoku Corporation, Stevens Davis Miller & Mosher, December 25, 2001: US06332933 (9 worldwide citation)

Magnetic nanocomposite materials including iron, rare earth elements, boron, refractory metal and, optionally, cobalt are disclosed. Neodymium and lanthanum are preferred rare earth elements. The amounts of Nd, La, B and refractory metal are controlled in order to produce both hard and soft magnetic ...


7
Yu Ming Tsui, Wen Cheng Chang, Shung Jen Yu: Method for making high-sheet-resistance polysilicon resistors for integrated circuits. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, November 6, 2001: US06313516 (9 worldwide citation)

A high-sheet-resistance polysilicon resistor for integrated circuits is achieved by using a two-layer polysilicon process. After forming FET gate electrodes and capacitor bottom electrodes from a polycide layer, a thin interpolysilicon oxide (IPO) layer is deposited to form the capacitor interelectr ...


8
Wen Cheng Chang: Composite-material buckle. Win Chance Metal, Alan Kamrath, Kamrath IP Lawfirm P A, October 22, 2013: US08561267 (4 worldwide citation)

A composite-material buckle contains a base including a first segment with an engaging face and a second segment, between the first segment and the second segment being defined two side walls having two symmetrical holes and two symmetrically elongated pivoting portions respectively; a shaft includi ...


9
Sen Fu Chen, Jie Shing Wu, Po Tau Chu, Wen Cheng Chang: Process for bonding pad protection from damage. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, February 17, 1998: US05719087 (4 worldwide citation)

A protective cap of dielectric material is deposited by plasma-enhanced chemical vapor deposition on the surface of electrical bonding pads of semiconductor integrated circuits prior to deposition of the final passivation layer. The protective cap serves to isolate the pad surface from electrochemic ...


10
Sen Fu Chen, Bao Ru Yang, Wen Cheng Chang, Heng Hsin Liu: Method for polymer removal after etching. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, May 18, 1999: US05904570 (4 worldwide citation)

The polymeric residues which remain after the plasma-enhanced subtractive etching of polycrystalline layers in reactive halogen-containing gases are removed by a combination ashing in oxygen gas and subsequent removal with an organic solvent.