1
Weimann Klaus Dipl Ing, Kommissari Karl Dipl Ing: Thyristor.. Bbc Brown Boveri & Cie, July 9, 1980: EP0012846-A1 (33 worldwide citation)

In a thyristor which includes a protective circuit (for example parallel resistor and capacitor connected between gate and cathode to reject interference pulses, the protective circuit is integrated with the thyristor to save space and resist vibrations. As shown, the protective circuit is integrate ...


2
Weimann Klaus Dipl Ing, Eisele Dieter Dipl Phys: Contact system for power thyristor.. Bbc Brown Boveri & Cie, September 3, 1980: EP0014761-A1 (6 worldwide citation)

1. Contact system for a pressure-contactable power thyristor, which bears a branched gate structure and metallizations (13a, 13b) on an active silicon block (12) in the emitter region (1) and in the gate region (2), wherein a contact plate (14), which comprises a flat underside and a bore for the in ...


3
Weimann Klaus Dipl Ing, Eisele Dieter Dipl Phys, Hahn Berthold: Disc-shaped semiconductor cell for pressure-contact power semiconductor components.. Bbc Brown Boveri & Cie, December 21, 1983: EP0096266-A2 (5 worldwide citation)

1. Disc-shaped pressure-contactable power semi-conductor component having a cylindrical ring (1) which serves as housing and which is composed of plastic and has a circumferential projection (10) with rectangular cross section on its internal surface, having two pressure-contact discs (2) between wh ...


4
Weimann Klaus Dipl Ing, Eisele Dieter Dipl Phys: Semiconductor module with a plurality of semiconductor elements.. Bbc Brown Boveri & Cie, February 23, 1983: EP0072545-A2 (2 worldwide citation)

A semiconductor module intended for use in the construction of d.c. chopper controllers for electrical vehicles comprises a mounting plate (10), an insulating housing (13) on the mounting plate (10), a plurality of semiconductor elements (T1, D1, D2, D3) in the interior of the insulating housing (13 ...


5
Weimann Klaus Dipl Ing, Baab Hans Joachim Ing Grad: Modular semiconductor component.. Bbc Brown Boveri & Cie, September 21, 1983: EP0088924-A2

The semiconductor component with the properties of a reverse- conducting thyristor is of modular construction. A semiconductor chip (T) with the properties of a thyristor and at least one further semiconductor chip (D1, D2) with the properties of a diode are soldered or pressure-contacted to a base ...


6
Irons Robert Charles, Weimann Klaus Dipl Ing: Gate turn-off thyristor.. Bbc Brown Boveri & Cie, January 8, 1986: EP0166977-A2

Due to the spreading resistance of the p-type base layer of a gate turn-off thyristor, the main current between anode and cathode during switch-off is carried for a relatively long time in a narrow zone beneath the emitter. This known effect limits the switching power of a gate turn-off thyristor. T ...