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Yang Chih Chao, Chanda Kaushik, Wang Ping Chuan: Interconnect structure with bi-layer metal cap and method of fabricating the same. Internatl Business Mach Corp &Lt IBM&Gt, September 4, 2008: JP2008-205458 (3 worldwide citation)

PROBLEM TO BE SOLVED: To provide a structure and method of fabricating an interconnect structure with a bi-layer metal cap.SOLUTION: In one embodiment, this method of fabricating an interconnect structure with a bi-layer metal cap includes the steps of: forming an interconnect structure portion in a ...


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He Zhong Xiang, Joseph J Alvin, Orner A Bradley, Ramachandran Vidhya, St Onge A Stephen, Wang Ping Chuan: Bipolar and cmos integration with reduced contact height. Ibm, August 30, 2006: EP1695383-A1

Disclosed is a method and structure for an integrated circuit structure that includes a plurality of complementary metal oxide semiconductor (CMOS) transistors (116) and a plurality of vertical bipolar transistors (118) positioned on a single substrate (110). The vertical bipolar transistors (118) a ...


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WANG PING CHUAN, TING TSO HUI, YOUNUS MOHAMMAD I: [en] In-line characterization. IBM, June 6, 2012: GB2486158-A

[en] An apparatus is provided and includes a thermally isolated device under test to which first and second voltages are sequentially applied, a local heating element to impart first and second temperatures to the device under test substantially simultaneously while the first and second voltages are ...


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YANG ZHIJIAN, WANG PING CHUAN, FENG KAI DI: [en] Gain recovery in a bipolar transistor. IBM, April 11, 2012: GB2484443-A

[en] A method of recovering gain in a bipolar transistor includes: providing a bipolar transistor including an emitter, a collector, and a base disposed between junctions at the emitter and the collector reverse biasing the junction disposed between the emitter and the base with an operational volta ...


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Guarin Fernando, Hostetter J E Jr, Rauch Stewart E Iii, Wang Ping Chuan, Yang Zhijian J: Methodology for recovery of hot carrier induced degradation in bipolar devices. Ibm, yujing liurui dong, November 14, 2007: CN200580041988

A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar tr ...


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Deligianni Hariklia, Edwards Robert D, Fleischman Thomas J, Groves Robert A, Montrose Charles J, Volant Richard P, Wang Ping Chuan: Apparatus for measuring switch characters and apparatus for enlarging dimension of switch sampling. Ibm, taofeng bei, May 30, 2007: CN200610163588

The present invention provides multiple test structures for performing reliability and qualification tests on MEMS switch devices. A Test structure for contact and gap characteristic measurements is employed having a serpentine layout simulates rows of upper and lower actuation electrodes. A cascade ...


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Guarin Fernando, Hostetter J Edwin Jr, Rauch Stewart E Iii, Wang Ping Chuan, Yang Zhijian J: Methodology for recovery of hot carrier induced degradation in bipolar devices. Ibm, August 29, 2007: EP1825505-A2

A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar tr ...


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