1
Maydan Dan, Somekh Sasson, Wang David Nin Kou, Cheng David, Toshima Masato, Harari Isaac, Hoppe Peter D: Multiple chamber integrated process system.. Applied Materials, June 22, 1988: EP0272141-A2 (81 worldwide citation)

An integrated modular multiple chamber vacuum processing system (10) is disclosed. The system includes a load lock (12), may include an external cassette elevator (24), and an internal load lock wafer elevator (50), and also includes stations about the periphery of the load lock for connecting one, ...


2
Rajan Suresh Natarajan, Smith Michael John Sebastian, Schakel Keith R, Wang David T, Weber Frederick Daniel: Memory circuit system and method. Rajan Suresh Natarajan, Smith Michael John Sebastian, Schakel Keith R, Wang David T, Weber Frederick Daniel, Metaram, KOTAB Dominic M, August 23, 2007: WO/2007/095080 (76 worldwide citation)

A memory circuit system and method are provided. In one embodiment, an interface circuit is capable of communication with a plurality of memory circuits and a system. In use, the interface circuit is operable to interface the memory circuits and the system for reducing command scheduling constraints ...


3
Rajan Suresh, Smith Michael, Wang David: Methods and apparatus of stacking drams. Metaram, Rajan Suresh, Smith Michael, Wang David, ZILKA Kevin J, March 8, 2007: WO/2007/028109 (71 worldwide citation)

Large capacity memory systems (FB-DIMMs) are constructed using stacked memory integrated circuits (220) or chips (310). The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.


4
Wang David Nin Kou, White John M, Law Kam S, Leung Cissy, Umotoy Salvador P, Collins Kenneth S, Adamik John A, Perlov Ilya, Maydan Dan: Teos based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.. Applied Materials, June 22, 1988: EP0272140-A2 (59 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor (10) is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multi ...


5
Wong Jerry Yuen Kui, Chang Mei, Maydan Dan, Wang David Nin Kou, Mak Alfred W S: Bromine and iodine etch process for silicon and silicides.. Applied Materials, June 22, 1988: EP0272143-A2 (43 worldwide citation)

A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or ...


6
Mukherjee Shyama P, Wang David W: Low dielectric constant composite laminates filled with molecularly porous aerogels.. Ibm, November 11, 1992: EP0512401-A2 (30 worldwide citation)

A low dielectric constant, controlled coefficient of thermal expansion, low cost material which includes uniformly distributed aerogel microspheres having voids in molecular dimension (at nanoscale) is prepared by extrusion and standard impregnation and lamination techniques. The aerogel microsphere ...


7
Wang David Wei, Lehmann Leonard Theodore: Bioabsorbable coating for a surgical device.. American Cyanamid Co, March 9, 1988: EP0258781-A1 (25 worldwide citation)

A suture coating comprising a copolymer having about 60 to 80 weight percent of beta -hydroxybutyrate linkages is disclosed. The remaining linkages can be at least beta -hydroxyvalerate. In one embodiment, the coating is the copolymer combined with a stearoyl lactylate having the formula: wherein X ...


8
Cheng David, Maydan Dan, Somekh Sasson, Stalder Kenneth R, Andrews Dana L, Chang Mei, White John M, Wong Jerry Yuen Kui, Zeitlin Vladimir J, Wang David Nin Kou: Magnetic field enhanced plasma etch reactor.. Applied Materials, June 22, 1988: EP0272142-A2 (20 worldwide citation)

A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and ...


9
Lee Peter Wai Man, Wang David N K, Nagashima Makoto, Fukuma Kazuto, Sato Tetsuya: An integrated circuit structure with a boron phosphorus silicate glass composite layer on semiconductor wafer and improved method for forming same.. Applied Materials, April 10, 1991: EP0421203-A1 (20 worldwide citation)

A composite boron phosphorus silicate glass (BPSG) insulating and planarizing layer (40) is formed over stepped surfaces (20,24) of a semiconductor wafer (10) by a two step process. The composite BPSG layer (40) is characterized by the absence of discernible voids and a surface which is resistant to ...


10
Law Kam Shing, Leung Cissy, Tang Ching Cheong, Collins Kenneth Stuart, Chang Mei, Wong Jerry Yuen Kui, Wang David Nin Kou: Reactor chamber for selfcleaning process.. Applied Materials, December 28, 1988: EP0296891-A2 (19 worldwide citation)

The disclosure relates to a process for cleaning a reactor chamber (12) both locally adjacent the RF electrodes (16, 92) and also throughout the chamber and the exhaust system (105, 109, 118) to and including components such as the throttle valve. Preferably, a two-step continuous etch sequence is u ...



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