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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: Field effect transistor. Nippon Electric Co, March 19, 2008: EP1901341-A1 (12 worldwide citation)

The present invention provides a field effect transistor exhibiting a good performance at high voltage operation as well as a high frequency characteristic. In the present invention, in a field effect transistor (100) comprising a first field plate electrode (116) and a second field plate electrode ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: Field effect transistor. Nippon Electric Co, March 19, 2008: EP1901342-A1 (11 worldwide citation)

The present invention provides a field effect transistor both exhibiting an excellent performance at high voltage operation as well as a high frequency characteristic. In the present invention, a field effect transistor comprises a layer structure made of compound semiconductor (111) provided on a s ...


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Wakejima Akio, Ota Kazuki, Matsunaga Takaharu, Contrata, Kuzuhara Masaaki: Field effect transistor. NEC, November 29, 2002: JP2002-343814 (9 worldwide citation)

PROBLEM TO BE SOLVED: To realize large current amplitude and a satisfactory high output characteristic in a field effect transistor having an InGaP channel layer.SOLUTION: An electric field control electrode 10 connected to a gate electrode 8 through an insulating film 9 on semiconductor crystal is ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: (Ja) 電界効果トランジスタ, (En) Field effect transistor. Nec Corporation, Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori, MIYAZAKI Teruo, December 14, 2006: WO/2006/132418 (5 worldwide citation)

(EN) There is provided a field effect transistor having both preferable high-voltage operation characteristic and high-frequency characteristic. The field effect transistor (100) includes a first field plate electrode (116) and a second filed plate electrode (118). The second field plate electrode ( ...


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Miyamoto Hironobu, Ando Yuji, Inoue Takashi, Nakayama Tatsuo, Okamoto Yasuhiro, Wakejima Akio, Ota Kazuki, Murase Yasuhiro, Yamanoguchi Katsumi: Field-effect transistor. NEC, September 18, 2008: JP2008-218696 (5 worldwide citation)

PROBLEM TO BE SOLVED: To provide a high output nitride semiconductor transistor having a low current collapse and a low gate leakage current.SOLUTION: In the transistor comprises a buffer layer 2, a GaN channel layer 3, and an AlGaN electron supply layer 4 formed on a substrate 1. A source electrode ...


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Inoue Takashi, Nakayama Tatsuo, Ando Yuji, Murase Yasuhiro, Ota Kazuki, Miyamoto Hironobu, Yamanoguchi Katsumi, Kuroda Naotaka, Wakejima Akio, Okamoto Yasuhiro: Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor. Nippon Electric Co, October 8, 2008: EP1978550-A1 (4 worldwide citation)

In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve ...


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Wakejima Akio, Miyamoto Hironobu, Inoue Takashi, Okamoto Yasuhiro, Nakayama Tatsuo, Kuroda Naotaka, Ota Kazuki, Tanomura Masahiro, Murase Yasuhiro, Ando Yuji: Iii-v nitride semiconductor field-effect transistor and its manufacturing method. NEC, December 18, 2008: JP2008-306083 (4 worldwide citation)

PROBLEM TO BE SOLVED: To provide an FET which suppresses current collapse, relaxes an electric field generated at a drain side edge of a gate, and is operable at a high voltage.SOLUTION: A GaN buffer layer 102 and an AlGaN layer 103 are formed on a substrate 101. A source electrode 104 and a drain e ...


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Samoto Norihiko, Wakejima Akio, Makino Yoichi: Semiconductor device and manufacture thereof. NEC, December 19, 2000: JP2000-353708 (1 worldwide citation)

PROBLEM TO BE SOLVED: To obtain a semiconductor device, with which the prevention of lowering of the yield of production and the improvement of high frequency characteristic can be compatibly accomplished when a microscopic gate electrode is formed, and to obtain a manufacturing method of the semico ...


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Wakejima Akio: Amplifier. NEC, January 31, 2008: JP2008-022499 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide an amplifier which amplifies RF signals containing two or more frequency components with favorable distortion characteristics in an apparatus such as a mobile base station which performs multi-carrier transmission.SOLUTION: A circuit having a characteristic (negative ...