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Ramachandra Divakaruni, Russell J Houghton, Jack A Mandelman, W David Pricer, William R Tonti: Method for novel SOI DRAM BICMOS NPN. International Business Machines Corporation, Mark F Chadurjian, Eugene I Shkurko, F William McLaughlin, December 10, 2002: US06492211 (125 worldwide citation)

There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on insulator (SOI) bipolar transistor integrated into a typical DRAM trench process sequence. A DRAM array utilizing an NFET allows for an integrated bipolar NPN sequence. Similarly, a vertical bipolar PN ...


2
Thomas M Shaw, W David Pricer, Deborah A Neumayer, John D Baniecki, Robert B Laibowitz: Tuneable ferroelectric decoupling capacitor. International Business Machines Corporation, Robert A Walsh, May 3, 2005: US06888714 (67 worldwide citation)

A voltage supply bypass capacitor for use with a semiconductor integrated circuit chip or module comprising a ferroelectric dielectric having electromechanical properties designed to provide maximum losses at selected frequencies.


3
W David Pricer: Time standard circuit with delay line oscillator. International Business Machine Corporation, Robert A Walsh, Thornton & Thornton, September 30, 1997: US05673005 (32 worldwide citation)

This is an integrated timing circuit which can be formed on a microprocessor chip. The circuit uses an oscillator having a delay line and a variable delay element. The delay line and the delay element vary together to hold the velocity of signal propagation in the circuit substantially constant. The ...


4
Anthony R Bonaccio, Michel S Michail, W David Pricer: Broadband dc amplifier technique with very low offset voltage. International Business Machines Corporation, Robert Curcio, Eugene I Shkurko, Delio & Peterson, March 7, 2000: US06034568 (6 worldwide citation)

An operational amplifier with two differential input stages is used to separately achieve low offset voltage and broad bandwidth characteristics. One input stage addresses dc and low frequency signals while the other addresses broadband frequencies. All transistors forming the dc stage are biased in ...


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Thomas M Shaw, W David Pricer, Deborah A Neumayer, John D Baniecki, Robert B Laibowitz: Tuneable ferroelectric decoupling capacitor. International Business Machines Corporation, Robert A Walsh, Cantor Colburn, January 14, 2003: US06507476 (6 worldwide citation)

A method for configuring a bypass capacitor for use in conjunction with an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes selecting mechanical dimensions for the bypass capacitor, the mechanical dimensions causing the bypass capacitor to exhi ...


6
Timothy Daubenspeck, Kurt R Kimmel, William A Klaasen, William T Motsiff, Rosemary A Previti Kelly, W David Pricer, Jed H Rankin: Corrosion insensitive fusible link using capacitance sensing for semiconductor devices. International Business Machines Corporation, Howard J Walter Jr Esq, McGinn & Gibb PLLC, December 17, 2002: US06496053 (5 worldwide citation)

A structure and method for a programming device or a fuse includes a capacitive circuit having a capacitance which is alterable. The capacitive circuit can include a first capacitor, a fuse link connected to the first capacitor and a second capacitor connected to the fuse link, wherein removing a po ...


7
Alvar A Dean, Kenneth J Goodnow, Paul T Gutwin, Stephen W Mahin, W David Pricer: Directed least recently used cache replacement method. International Business Machines Corporation, McGuire Woods, October 17, 2002: US20020152361-A1

Fine grained control of cache maintenance resulting in improved cache hit rate and processor performance by storing age values and aging rates for respective code lines stored in the cache to direct performance of a least recently used (LRU) strategy for casting out lines of code from the cache whic ...


8
Thomas M Shaw, W David Pricer, Deborah A Neumayer, John D Baniecki, Robert B Laibowitz: Tuneable ferroelectric decoupling capacitor. International Business Machines Corporation, International Business Machines Corporation, June 19, 2003: US20030112578-A1

A voltage supply bypass capacitor for use with a semiconductor integrated circuit chip or module comprising a ferroelectric dielectric having electromechanical properties designed to provide maximum losses at selected frequencies.


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