1
Chiu Ting, Valery Dubin: Plated copper interconnect structure. Advanced Micro Devices, October 19, 1999: US05969422 (380 worldwide citation)

A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for th ...


2
Valery Dubin, Chiu Ting: Method for fabricating copper-aluminum metallization. Advanced Micro Devices, Edward C Kwok, Skjerven Morrill MacPherson Franklin & Friel, June 15, 1999: US05913147 (213 worldwide citation)

A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.


3
Yosi Shacham Diamand, Vinh Nguyen, Valery Dubin: Electroless deposition of metal films with spray processor. Cornell Research Foundation, FSI International, Vidas Arrett & Steinkraus, May 23, 2000: US06065424 (205 worldwide citation)

Electroless plating of very thin metal films, such as copper, is accomplished with a spray processor. Atomized droplets or a continuous stream of an electroless plating solution are sprayed on a substrate. The electroless plating solution may be prepared by mixing a reducing solution and a metal sto ...


4
Valery Dubin: Methods for making interconnects and diffusion barriers in integrated circuits. Intel Corporation, Eduardo E Drake, Schwegman Lundberg Woessner & Kluth P A, March 19, 2002: US06359328 (172 worldwide citation)

The inventor devised methods of forming interconnects that result in conductive structures with fewer voids and thus reduced electrical resistance. One embodiment of the method starts with an insulative layer having holes and trenches, fills the holes using a selective electroless deposition, and fi ...


5
Valery Dubin, Chiu Ting, Robin W Cheung: Pulse electroplating copper or copper alloys. Advanced Micro Devices, October 26, 1999: US05972192 (169 worldwide citation)

High aspect ratio openings in excess of 3, such as trenches, via holes or contact holes, in a dielectric layer are voidlessly filled employing a pulse or forward-reverse pulse electroplating technique to deposit copper or a copper-base alloy. A leveling agent is incorporated in the electroplating co ...


6
Valery Dubin: Self-encapsulated copper metallization. Advanced Micro Devices, June 19, 2001: US06249055 (84 worldwide citation)

Copper or copper alloy interconnection patterns are formed by a damascene technique. An aluminum or magnesium alloy is deposited in a damascene opening formed in a dielectric layer. Copper or a copper alloy is then electroplated or electroless plated on the aluminum or magnesium alloy, filling the o ...


7
Takeshi Nogami, Valery Dubin, Robin Cheung: Method of electroplating a copper or copper alloy interconnect. Advanced Micro Devices, October 19, 1999: US05968333 (74 worldwide citation)

Copper or a copper alloy is electroplated to fill via/contact holes and/or trenches in a dielectric layer. A barrier layer is initially deposited on the dielectric layer lining the hole/trench. A thin conformal layer of copper or a copper alloy is sputter deposited on the barrier layer outside the h ...


8
Valery Dubin, Takeshi Nogami: Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate. Advanced Micro Devices, Fliesler Dubb Meyer & Lovejoy, March 16, 1999: US05882498 (59 worldwide citation)

A method for electroplating a silicon substrate in manufacturing a semiconductive device is provided. Electroplating process chamber contacts or fingers used in positioning a silicon substrate or wafer during an electroplating process are plated with a metal layer to prevent oxidation of the contact ...


9
Valery Dubin: Electroplating apparatus. Advanced Micro Devices, November 10, 1998: US05833820 (35 worldwide citation)

Gas shielding is employed to prevent metal plating on contacts during electroplating to reduce particulate contamination and increase thickness uniformity. In another embodiment, gas shielding is employed to prevent deposition on the backside and edges of a semiconductor wafer during plating.


10
Valery Dubin, Chiu Ting: Copper-aluminum metallization. Advanced Micro Devices, Edward C Kwok Esq, Skjerven Morrill MacPherson, August 7, 2001: US06271591 (33 worldwide citation)

A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.



Click the thumbnails below to visualize the patent trend.