1
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Tru Si Technologies, Haynes and Boone, Michael Shenker, March 31, 2009: US07510928 (28 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


2
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Allvia, Michael Shenker, Haynes and Boone, June 21, 2011: US07964508 (11 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


3
Valentin Kosenko, Edward Lee McBain, Cyprian Emeka Uzoh, Pezhman Monadgemi, Sergey Savastiouk: Optical interposer. Invensas Corporation, Haynes and Boone, June 24, 2014: US08757897 (3 worldwide citation)

An optical interposer includes grooves (310) for optical fiber cables (104) coupled to a transducer (120). The grooves are formed by etching a cavity (410) in a substrate (130), filling the cavity with some layer (520), then etching the layer to form the grooves. The cavity has outwardly sloped side ...


4
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Invensas Corporation, Haynes and Boone, August 18, 2015: US09111902 (1 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


5
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Invensas Corporation, Haynes and Boone, January 21, 2014: US08633589 (1 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


6
Valentin Kosenko, Sergey Savastiouk: Structures with through vias passing through a substrate comprising a planar insulating layer between semiconductor layers. Invensas Corporation, Haynes and Boone, September 9, 2014: US08829683 (1 worldwide citation)

A through via contains a conductor (244, 262) passing through a substrate (140). The substrate can be SOI or some other substrate containing two semiconductor layers (140.1, 140.2) on opposite sides of an insulating layer (140B). The through via includes two constituent vias (144.1, 144.2) formed fr ...


7
Valentin Kosenko, Sergey Savastiouk: Substrates with through vias with conductive features for connection to integrated circuit elements, and methods for forming through vias in substrates. Invensas Corporation, Haynes and Boone, April 28, 2015: US09018094 (1 worldwide citation)

A through via (144) contains a conductor (244, 276) passing through a substrate (140) for connection to an integrated circuit element. The through via consists of two segments (144.1, 144.2) formed from respective different sides (140.1, 140.2) of the substrate and meeting inside the substrate. Each ...


8
Valentin Kosenko, Sergey Savastiouk: Structures with through vias passing through a substrate comprising a planar insulating layer between semiconductor layers. Invensas Corporation, Haynes and Boone, April 30, 2013: US08431431 (1 worldwide citation)

A through via contains a conductor (244, 262) passing through a substrate (140). The substrate can be SOI or some other substrate containing two semiconductor layers (140.1, 140.2) on opposite sides of an insulating layer (140B). The through via includes two constituent vias (144.1, 144.2) formed fr ...


9
Valentin Kosenko, Edward Lee McBain, Cyprian Emeka Uzoh, Pezhman Monadgemi, Sergey Savastiouk: Structures formed using monocrystalline silicon and/or other materials for optical and other applications. Invensas Corporation, Haynes and Boone, April 26, 2016: US09323010

To fabricate an interposer for interfacing waveguides (e.g. optical fiber cables) to transducers, a cavity (410) is formed in a top surface of a substrate. A first layer (520) is formed over the cavity's bottom surface, with one or more gaps in the first layer's top surface. A second layer (3410) is ...


10
Valentin Kosenko, Sergey Savastiouk: Substrates with through vias with conductive features for connection to integrated circuit elements, and methods for forming through vias in substrates. Invensas Corporation, Haynes and Boone, March 7, 2017: US09589879

A through via (144) contains a conductor (244, 276) passing through a substrate (140) for connection to an integrated circuit element. The through via consists of two segments (144.1, 144.2) formed from respective different sides (140.1, 140.2) of the substrate and meeting inside the substrate. Each ...