1
Ulrich M Goesele, Q Y Tong: Method for the transfer of thin layers of monocrystalline material to a desirable substrate. Max Planck Society, March 2, 1999: US05877070 (368 worldwide citation)

A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, which may have a substantially different coefficient of thermal expansion than the first substrate is realized by producing hydrogen-traps in the first substrate by a first impla ...


2
Ulrich M Goesele, Qin Yi Tong: Method for the transfer of thin layers monocrystalline material onto a desirable substrate. Max Planck Society, November 21, 2000: US06150239 (123 worldwide citation)

A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the h ...


3
Ulrich M Goesele, Volker E Lehmann: Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning. June 18, 1991: US05024723 (66 worldwide citation)

A method for forming a thin crystal layer of silicon on top of a insulating layer that is supported by a silicon wafer used for electronic device applications. Carbon ions are implanted in a silicon wafer in order to form an etch stop. Said wafer is bonded to a supporting wafer that has an insulatin ...


4
Ulrich M Goesele, Reinhard J Stengl: Method for bubble-free bonding of silicon wafers. Duke University, Richard E Jenkins, November 28, 1989: US04883215 (58 worldwide citation)

A method for bubble-free bonding of silicon wafers to silicon wafers or silicon wafers to quartz wafers either outside or inside a Clean Room. The method includes the steps of positioning wafers in closely spaced-apart and parallel relationship to each other in a rack or the like with mirror-polishe ...


5
Ulrich M Goesele, Volker Lehmann: Method for bubble-free bonding of silicon wafers. Duke University, Richard E Jenkins, October 16, 1990: US04962879 (54 worldwide citation)

A method for bubble-free bonding of silicon wafers to silicon wafers or silicon wafers to quartz wafers either outside or inside a Clean Room. The method includes the steps of positioning wafers in closely spaced-apart and parallel relationship to each other in a rack or the like with mirror-polishe ...


6
Ulrich M Goesele, Volker E Lehmann: Microporous crystalline silicon of increased band-gap for semiconductor applications. April 27, 1993: US05206523 (18 worldwide citation)

A process is disclosed for producing microporous crystalline silicon which has a band-gap substantially increased relative to that of normal crystalline silicon. This process involves the preparation of quantum wires of silicon by means of a chemical attack method carried out on silicon that has bee ...