1
sally liu
Jhe Ching Lu, Hsiao Tsung Yen, Sally Liu, Tzu Jin Yeh, Min Chie Jeng: Balun system and method. Taiwan Semiconductor Maufacturing Company, Slater & Matsil L, August 6, 2013: US08502620 (9 worldwide citation)

A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and ...


2
sally liu
Hsiao Tsung Yen, Tzu Jin Yeh, Sally Liu: Method and apparatus for de-embedding on-wafer devices. Taiwan Semiconductor Manufacturing Company, Haynes and Boone, May 31, 2011: US07954080 (8 worldwide citation)

A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrins ...


3
sally liu
Shu Ying Cho, Tzu Jin Yeh, Sally Liu: Transmitting radio frequency signal in semiconductor structure. Taiwan Semiconductor Manufacturing Company, Haynes and Boone, June 5, 2012: US08193880 (1 worldwide citation)

A semiconductor device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. On one side of the signal line is a first dielectric, and on the opposite side of the signal line is a second dielectric. First and second ground lines are ...


4
sally liu
Tzu Jin Yeh, Kal Wen Tan, Chewn Pu Jou, Sally Liu, Fu Lung Hsueh: Method for substrate noise analysis. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, January 7, 2014: US08627253 (1 worldwide citation)

In accordance with an embodiment, a method for substrate noise analysis comprises using a first processor based system, creating and simulating a circuit schematic comprising a multi-terminal model of a transistor, and thereafter, creating a layout based on properties represented in the circuit sche ...


5
Jun De Jin, Ming Hsien Tsai, Tzu Jin Yeh: Devices and bandpass filters therein having at least three transmission zeroes. Taiwan Semiconductor Manufacturing, Duane Morris, June 3, 2014: US08742871 (26 worldwide citation)

A bandpass filter comprises a first capacitor, a second capacitor, a third capacitor and at least two resonators. The first and second capacitors are coupled in parallel with each other, and each of the first and second capacitors includes an input. The third capacitor is coupled between the first c ...


6
Jun De Jin, Tzu Jin Yeh: On-chip ferrite bead inductor. Taiwan Semiconductor Manufacturing, Duane Morris, December 31, 2013: US08618631 (21 worldwide citation)

A semiconductor structure having an in situ chip-level ferrite bead inductor and method for forming the same. Embodiments include a substrate, a first dielectric layer formed on the substrate, a lower ferrite layer formed on the first dielectric layer, and an upper ferrite layer spaced apart from th ...


7
Jun De Jin, Tzu Jin Yeh: Low power active filter. Taiwan Semiconductor Manufacturing, Eschweiler & Associates, December 17, 2013: US08610494 (21 worldwide citation)

Some embodiments relate to a band-pass filter arranged in a ladder-like structure. The band-pass filter includes respective inductor-capacitor (LC) resonators arranged on respective rungs of the ladder-like structure. Respective matching circuits are arranged on a leg of the ladder-like structure be ...


8
Chih Hsun Chu, Tzu Jin Yeh: Method of fabricating semiconductor devices with raised doped region structures. Mosel Vitelic, W Wayne Liauh, September 5, 2000: US06114209 (18 worldwide citation)

A method of manufacturing a semiconductor device with raised source/drain. This method eliminates the problem which is often experienced when the shallow junction technique is applied, in which over-etching of the source/drain region during the contact etching and the salicide process can lead to cu ...


9
Ming Hsien Tsai, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh: Junction varactor for ESD protection of RF circuits. Taiwan Semiconductor Manufacturing, Duane Morris, December 18, 2012: US08334571 (9 worldwide citation)

An ESD protection device includes a first well of a first semiconductor type disposed in a substrate of a second semiconductor type forming a first diode. A second well of the second semiconductor type is formed in the substrate to form a second diode with the first well. A first plurality of doped ...


10
Tzu Jin Yeh, Hsien Chang Wu, Ming Ta Yang, Yu Tai Chia: Inductor Q value improvement. Taiwan Semiconductor Manufacturing Company, Duane Morris, January 24, 2006: US06989578 (4 worldwide citation)

An inductor in an integrated circuit comprises a conductive trace disposed over an insulating layer which overlies a semiconductor substrate of a first conductivity type and at least two deep wells of opposite conductivity type in the substrate underneath the track. In another embodiment, an inducto ...