1
Tyler Lowrey: Three-dimensional (3D) programmable device. Intel Corporation, Anthony M Martinez, December 31, 2002: US06501111 (413 worldwide citation)

A three-dimensional (3D) memory device having polysilicon diode isolation elements for chalcogenide memory cells and method for fabricating the same are described. The memory device includes a plurality of stacked memory cells to form a three-dimensional (3D) memory array. The memory device also inc ...


2
Tyler Lowrey, Guy C Wicker: Programmable resistance memory arrays with reference cells. Ovonyx, Philip H Schlazer, Marvin S Siskind, David W Schumaker, November 6, 2001: US06314014 (307 worldwide citation)

A memory system comprising memory cells and reference cells each including a programmable resistance element. The resistance state of a memory cell is determined by comparing a sense signal developed by the memory cell with a reference signal developed by one or more of the reference cells. The prog ...


3
James E O Toole, John R Tuttle, Mark E Tuttle, Tyler Lowrey, Kevin M Devereaux, George E Pax, Brian P Higgins, David K Ovard, Shu Sun Yu, Robert R Rotzoll: Radio frequency data communications device. Micron Technology, Wells St John Roberts Gregory & Matkin P S, October 10, 2000: US06130602 (292 worldwide citation)

A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receive ...


4
Tyler Lowrey, Stephen J Hudgens, Patrick J Klersy: Electrically programmable memory element with multi-regioned contact. Ovonyx, Philip H Schlazer, Marvin S Siskind, September 9, 2003: US06617192 (243 worldwide citation)

An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having ...


5
Tyler Lowrey, Daniel Xu: Method and apparatus to operate a memory cell. Ovonyx, Trop Pruner & Hu P C, December 23, 2003: US06667900 (229 worldwide citation)

Briefly, in accordance with an embodiment of the invention, a method and an apparatus to read a phase change memory is provided, wherein the method includes zero biasing unselected memory cells during reading of a selected memory cell.


6
Tyler Lowrey, Manzur Gill: Method and apparatus to program a phase change memory. Intel Corporation, Blakely Sokoloff Taylor & Zafman, September 23, 2003: US06625054 (217 worldwide citation)

Briefly, in accordance with an embodiment of the invention, a method and an apparatus to program a multi level cell (MLC) phase change material is provided.


7
Manzur Gill, Tyler Lowrey: Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements. Ovonyx, Trop Pruner & Hu P C, March 11, 2003: US06531373 (186 worldwide citation)

The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.


8
Tyler Lowrey: Isolating phase change material memory cells. Intel Corporation, Trop Pruner & Hu P C, June 10, 2003: US06576921 (163 worldwide citation)

A phase change memory may have reduced reverse bias current by providing a N-channel field effect transistor coupled between a bipolar transistor and a conductive line such a row line. By coupling the gate of the MOS transistor to the row line, reverse bias current in unselected cells or in the stan ...


9
Tyler Lowrey, Patrick Klersy, Stephen J Hudgens, Jon Maimon: Method for making programmable resistance memory element. Ovonyx, Philip H Schlazer, Marvin S Siskind, June 15, 2004: US06750079 (156 worldwide citation)

A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.


10
Tyler Lowrey: Isolating phase change material memory cells. Intel Corporation, Trop Pruner & Hu P C, January 6, 2004: US06673648 (153 worldwide citation)

A phase change memory may have reduced reverse bias current by providing a N-channel field effect transistor coupled between a bipolar transistor and a conductive line such a row line. By coupling the gate of the MOS transistor to the row line, reverse bias current in unselected cells or in the stan ...