1
Tyler A Lowrey, Randal W Chance, David A Cathey: Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process. Micron Technology, Angus C Fox III, July 12, 1994: US05328810 (528 worldwide citation)

The process starts with a primary mask, which may be characterized as a pattern of parallel, photoresist strips having substantially vertical edges, each having a minimum feature width F, and being separated from neighboring strips by a minimum space width which is also approximately equal to F. Fro ...


2
Tyler A Lowrey: Phase change material memory device. Intel Corporation, Trop Pruner & Hu P C, July 1, 2003: US06586761 (423 worldwide citation)

A phase change material memory cell may be formed with singulated, cup-shaped phase change material. The interior of the cup-shaped phase change material may be filled with a thermal insulating material. As a result, heat losses upwardly through the phase change material may be reduced and adhesion ...


3
Tyler A Lowrey, Manzur Gill: Single level metal memory cell using chalcogenide cladding. Ovonyx, Trop Pruner & Hu P C, May 20, 2003: US06567293 (380 worldwide citation)

An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substra ...


4
Tyler A Lowrey, Charles H Dennison: Utilizing atomic layer deposition for programmable device. Ovonyx, Trop Pruner & Hu P C, January 28, 2003: US06511867 (379 worldwide citation)

In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact, the contact formed on a substrate. An electrode is conformally deposited on a wall of the diel ...


5
Charles H Dennison, Guy C Wicker, Tyler A Lowrey, Stephen J Hudgens, Chien Chiang, Daniel Xu: Reduced area intersection between electrode and programming element. Ovonyx, Trop Pruner & Hu P C, January 6, 2004: US06673700 (370 worldwide citation)

A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrifici ...


6
Tyler A Lowrey, Stephen J Hudgens, Patrick Klersy: Compositionally modified resistive electrode. Intel Corporation, Blakely Sokoloff Taylor & Zafman, April 29, 2003: US06555860 (364 worldwide citation)

An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor. The electrode comprises a first portion having a first thermal coefficient of re ...


7
Stephen J Hudgens, Tyler A Lowrey, Patrick J Klersy: Multiple layer phrase-change memory. Intel Corporation, Trop Pruner & Hu P C, January 6, 2004: US06674115 (287 worldwide citation)

A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.


8
Tyler A Lowrey, Randal W Chance, D Mark Durcan, Ruojia Lee, Charles H Dennison, Yauh Ching Liu, Pierre C Fazan, Fernando Gonzalez, Gordon A Haller: Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography. Micron Technology, Angus C Fox III, Stanley N Protigal, May 7, 1991: US05013680 (286 worldwide citation)

A process for creating a DRAM array having feature widths that transcend the resolution limit of the employed photolithographic process using only five photomasking steps. The process involves the following steps: creation of a half-pitch hard-material mask that is used to etch a series of equidista ...


9
Stephen J Hudgens, Tyler A Lowrey, Patrick J Klersy: Multiple layer phase-change memory. Intel Corporation, Trop Pruner & Hu P C, January 14, 2003: US06507061 (263 worldwide citation)

A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.


10
Eungjoon Park, Tyler A Lowrey: Programming a phase-change memory with slow quench time. Ovonyx, Trop Pruner & Hu P C, November 26, 2002: US06487113 (240 worldwide citation)

A memory array is operated by increasing a number of currents through a number of corresponding cells of the array, where each cell has a structural phase-change material to store data for that cell. Each of the currents are increased to an upper level that is sufficiently high that can cause the co ...