1
Trung T Doan, Gurtej S Sandhu: Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers. Micron Technology, Wells St John Roberts Gregory & Matkin, January 11, 1994: US05278100 (439 worldwide citation)

A method of providing a conformal layer of TiSi.sub.x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR.sub.2).sub.4 precursor, gaseous silane and a carrier ...


2
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, Trask Britt, November 21, 2000: US06150253 (261 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is ap ...


3
Chris C Yu, Trung T Doan: Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs. Micron Technology, Stanley N Protigal, September 14, 1993: US05244534 (250 worldwide citation)

A method for forming conductive plugs within an insulation material is described. The inventive process results in a plug of a material such as tungsten which is more even with the insulation layer surface than conventional plug formation techniques. Conventional processes result in recessed plugs w ...


4
Gurtej S Sandhu, Trung T Doan: System and method for real-time control of semiconductor a wafer polishing, and a polishing head. Micron Technology, Wells St John Roberts Gregory & Matkin, January 23, 1996: US05486129 (246 worldwide citation)

A system for polishing a semiconductor wafer includes a rotatable platen subassembly and a drive mechanism coupled to rotate the platen subassembly at a platen velocity. A polishing head supports and holds a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer f ...


5
Mark E Tuttle, Trung T Doan, Angus C Fox, Gurtej S Sandhu, Hugh E Stroupe: Method and apparatus for improving planarity of chemical-mechanical planarization operations. Micron Technology, Fox III Angus C, August 3, 1993: US05232875 (233 worldwide citation)

A method and apparatus for improving planarity of chemical mechanical planarization of semiconductor wafers. The wafer is affixed to the planar surface of a wafer carrier. A planar platen, on which is mounted a polishing pad, is moved about in a plane parallel to the pad surface with either an orbit ...


6
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, TraskBritt, July 23, 2002: US06423621 (224 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element An insulative material is app ...


7
Gurtej S Sandhu, Laurence D Schultz, Trung T Doan: Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers. Micron Technology, Stephen A Gratton, Robert A de Groot, July 30, 1991: US05036015 (218 worldwide citation)

A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance ...


8
Gurtej S Sandhu, Trung T Doan: Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer. Micron Technology, Stephen A Gratton, March 23, 1993: US05196353 (218 worldwide citation)

A method and apparatus for controlling a chemical mechanical planarization (CMP) process in semiconductor manufacture includes an infrared camera for detecting and mapping a temperature of the wafer for developing a thermal image of the wafer. The thermal image can then be analyzed and used to contr ...


9
Trung T Doan, J Brett Rolfson, Tyler A Lowrey, David A Cathey: Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology. Micron Technology, Lia M Pappas, July 20, 1993: US05229331 (204 worldwide citation)

A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited ...


10
Gurtej S Sandhu, Laurence D Schultz, Trung T Doan: Apparatus for endpoint detection during mechanical planarization of semiconductor wafers. Micron Technology, Albert M Crowder, December 3, 1991: US05069002 (196 worldwide citation)

An apparatus for detecting a planar endpoint on a semiconductor wafer during mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating ...



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