The present invention provides a selectively conductive organic semiconductor (e.g., polymer) device that can be utilized as a memory cell. A polymer solution including a conducting polymer (22) self assembles relative to a conductive electrode (26). The process affords self-assembly such that a sho ...
One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...
The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...
A MONOS device and method for making the device has a charge trapping dielectric layer (32), such as an oxide- nitride-oxide (ONO) layer (34, 36, 38), formed on a substrate (30). A recess (44) is created through the ONO layer (32) and in the substrate (30). A metal silicide bit line (48) is formed i ...
The present invention provides a multi- layer organic memory device (10, 24, 28, 34, 38, 54, 58, 74, 78, 100, 700, 704) that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi- cell and multi-layer organic memory c ...
A method of fabricating an electronic structure by providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer (102), providing first and second openings (104, 106) through the dielectric layer (100), providing first and second conductive bodies (108, 110) in the ...
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