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Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven: Diode array architecture for addressing nanoscale resistive memory arrays. Spansion, Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven, LAM Christine S, May 26, 2006: WO/2006/055482 (11 worldwide citation)

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...


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Tripsas Nicholas H, Okoroanyanwu Uzodinma, Pangrle Suzette K, Vanbuskirk Michael A: Stacked organic memory devices and methods of operating and fabricating. Advanced Micro Devices, sCOLLOPY Daniel R, May 21, 2004: WO/2004/042737 (2 worldwide citation)

The present invention provides a multi-layer organic memory device (10, 24, 28, 34, 38, 54, 58, 74, 78, 100, 700, 704) that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory com ...


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Buynoski Matthew S, Pangrle Suzette K, Okoroanyanwu Uzodinma, Tripsas Nicholas H: Self assembly of conducting polymer for formation of polymer memory cell. Advanced Micro Devices, Buynoski Matthew, S, Pangrle Suzette K, Okoroanyanwu Uzodinma, Tripsas Nicholas H, sDRAKE Paul S, May 6, 2005: WO/2005/041319 (1 worldwide citation)

The present invention provides a selectively conductive organic semiconductor (e.g., polymer) device that can be utilized as a memory cell. A polymer solution including a conducting polymer (22) self assembles relative to a conductive electrode (26). The process affords self-assembly such that a sho ...


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Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven: Diode array architecture for addressing nanoscale resistive memory arrays. Spansion, August 1, 2007: GB2434694-A

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...


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Avanzino Steven, Sokolik Igor, Pangrle Suzette K, Tripsas Nicholas H, Shields Jeffrey A: Protection of active layers of memory cells during processing of other elements. Spansion, chengwei wangjin yang, October 17, 2007: CN200580038928

A method of fabricating an electronic structure by providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer (102), providing first and second openings (104, 106) through the dielectric layer (100), providing first and second conductive bodies (108, 110) in the ...



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