Hitoshi Yamaguchi, Toshiyuki Morishita, Toshimasa Yamamoto: Semiconductor device and method of manufacturing the same. Denso Corporation, Pillsbury Madison & Sutro, September 12, 2000: US06118152 (41 worldwide citation)

A silicon layer provided in a silicon substrate through a buried oxide film includes a silicon island partitioned by a trench. A surface of the silicon island in the trench is covered with a side wall oxide film, and LDMOS transistors are formed in the trench. A first impurity-doped polysilicon laye ...

Hitoshi Yamaguchi, Toshiyuki Morishita, Hiroaki Himi: Semiconductor device having a silicon-on-insulator structure. Nippondenso, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, July 7, 1998: US05777365 (31 worldwide citation)

A semiconductor device of SOI structure exhibits a excellent heat-radiating characteristic while assuring breakdown-voltage and element-isolating performance. A buried silicon oxide film having a thickness required by the breakdown-voltage of a semiconductor element is buried between a SOI layer and ...


Takumi Shibata, Shoichi Yamauchi, Yasushi Urakami, Toshiyuki Morishita: Trench gate type semiconductor device and method of manufacturing. Denso Corporation, Law Offices of David G Posz, December 17, 2002: US06495883 (28 worldwide citation)

A semiconductor device has a dielectric strength for a gate oxide film at a trench bottom that is higher than that of side walls used for channels. An n

Takumi Shibata, Toshiyuki Morishita: Method for manufacturing semiconductor device. Denso Corporation, Posz & Bethards, October 7, 2003: US06630389 (17 worldwide citation)

In a trench-gate type power MOSFET in which a gate electrode is formed on a gate oxide layer formed on a surface of a wall defining a trench, the trench is annealed by heating, for example, at the temperature between 1050° C. and 1150° C. in a hydrogen atmosphere before the gate oxide layer is forme ...

Rajesh Kumar, Hiroki Nakamura, Tsuyoshi Yamamoto, Toshiyuki Morishita: Silicon carbide power device having protective diode. Denso Corporation, Posz & Bethards, February 15, 2005: US06855981 (16 worldwide citation)

A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a prot ...

Masatake Nagaya, Toshiyuki Morishita: Semiconductor device arrangement and method of fabricating the same. Denso Corporation, Posz & Bethards, March 23, 2004: US06710435 (14 worldwide citation)

A semiconductor device arrangement includes a plurality of three-dimensional semiconductor units. Each of the three-dimensional semiconductor units includes a semiconductor chip in a shape of a rectangular parallelepiped having six surfaces, and semiconductor devices formed on at least one among the ...


Tsuyoshi Yamamoto, Toshio Sakakibara, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ooyanagi, Atsuo Watanabe: SIC semiconductor device and method for manufacturing the same. DENSO CORPORATION, Hitachi, Posz Law Group, December 21, 2010: US07855384 (12 worldwide citation)

A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench ...

Shinji Niwa, Takeshi Kawashima, Ichiro Akahori, Toshiyuki Morishita: Information device operation apparatus. DENSO CORPORATION, Posz Law Group, September 20, 2011: US08023698 (10 worldwide citation)

An information device operation apparatus includes an image capturing device, an illumination device, a controller, image storage device, operation object extracting device, detection device, and signal output device. The image storage device stores a plurality of images that are acquired by the ima ...