1
Leping Li, Steven G Barbee, Arnold Halperin, Tony F Heinz: In-situ monitoring of the change in thickness of films. International Business Machines Corporation, Alison D Mortinger, September 24, 1996: US05559428 (118 worldwide citation)

The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are ...


2
Tony F Heinz, Gary S Selwyn, Syothi Singh, John A Spinetti Jr: Detection of interfaces with atomic resolution during material processing by optical second harmonic generation. International Business Machines Corporation, Whitham & Marhoefer, March 15, 1994: US05294289 (34 worldwide citation)

A technique for observing optical second harmonic generation effect at a surface of a material during processing thereof, particularly in the presence of a plasma, for controlling the processing of the material. A preferred form of the apparatus and method includes a combination of spectral, spatial ...


3
Steven G Barbee, Tony F Heinz, Ulrich Hofer, Leping Li, Victor J Silvestri: Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control. International Business Machines Corporation, Michael J Balconi Lamica, February 21, 1995: US05392124 (23 worldwide citation)

A method and apparatus for detecting an etching endpoint of a film on a substrate whereby a first excitation beam of light having a prescribed wavelength is provided, the first light beam substantially containing only a first harmonic component of light at that wavelength. The first light beam is di ...


4
Steven G Barbee, Tony F Heinz, Leping Li, Eugene H Ratzlaff: Contactless real-time in-situ monitoring of a chemical etching process. International Business Machines Corporation, Michael J Balconi Lamica, August 16, 1994: US05338390 (19 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, said at least ...


5
Michael J Balconi Lamica, Steven G Barbee, Tony F Heinz, Yiping Hsiao, Leping Li, Eugene H Ratzlaff, Justin Wai chow Wong: Contactless real-time in-situ monitoring of a chemical etching. International Business Machines Corporation, Dale M Crockatt, May 14, 1996: US05516399 (17 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the a ...


6
Steven G Barbee, Tony F Heinz, Richard J Lebel, Leping Li, Victor J Silvestri: Method and apparatus for real-time film surface detection for large area wafers. International Business Machines Corporation, Whitham Curtis Whitham & McGinn, January 10, 1995: US05381234 (12 worldwide citation)

A method and apparatus for measuring with monolayer sensitivity in real-time the condition of a sample, includes a device for producing a modulated and collimated, p-polarized excitation light beam, a device for directing the p-polarized beam to a surface of the sample such that an angle of incidenc ...


7
Steven G Barbee, Tony F Heinz, Yiping Hsiao, Leping Li, Eugene H Ratzlaff, Justin W Wong: Minimizing overetch during a chemical etching process. International Business Machines Corporation, Dale M Crockatt, March 26, 1996: US05501766 (11 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two e ...


8
Steven G Barbee, Madhav Datta, Tony F Heinz, Leping Li, Eugene H Ratzlaff, Ravindra V Shenoy: Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process. International Business Machines Corporation, Alison D Mortinger, October 10, 1995: US05456788 (11 worldwide citation)

A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base membe ...


9
Steven G Barbee, Tony F Heinz, Yiping Hsiao, Leping Li, Eugene H Ratzlaff, Justin W Wong: Chemical etch monitor for measuring film etching uniformity during a chemical etching process. International Business Machines Corporation, Steven J Soucar, Dale M Crockatt, November 12, 1996: US05573624 (8 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electro ...


10
Steven G Barbee, Tony F Heinz, Yiping Hsiao, Leping Li, Eugene H Ratzlaff, Justin W Wong: Real time measurement of etch rate during a chemical etching process. International Business Machines Corporation, Steven J Soucar, Dale M Crockatt, December 10, 1996: US05582746 (8 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electro ...