1
Todd Abbott: Flash memory with recessed floating gate. Micron Technology, Knobbe Martens Olson & Bear, March 11, 2008: US07342272 (8 worldwide citation)

A flash memory device where the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to ach ...


2
Todd Abbott: Flash memory with recessed floating gate. Micron Technology, Knobbe Martens Olson & Bear, July 19, 2011: US07982255 (6 worldwide citation)

A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to a ...


3
Todd Abbott, Jigish D Trivedi, Mike Violette, Chuck Dennison: Method of selectively forming local interconnects using design rules. Micron Technology, Thorp Reed & Armstrong, July 15, 2003: US06594172 (5 worldwide citation)

The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local inter ...


4
Todd Abbott, Jigish D Trivedi, Mike Violette, Chuck Dennison: Method of selectively forming local interconnects using design rules. Micron Technology, Thorp Reed & Armstrong, March 18, 2003: US06535413 (4 worldwide citation)

The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local inter ...


5
Todd Abbott: Flash memory with recessed floating gate. Micron Technology, Knobbe Martens Olson & Bear, May 25, 2010: US07723185 (2 worldwide citation)

A flash memory device where the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to ach ...


6
Todd Abbott, Jigish D Tirvedi, Mike Violette, Chuck Dennison: Method of selectively forming local interconnects using design rules. Micron Technology, Thorp Reed & Armstrong, August 16, 2005: US06930901 (1 worldwide citation)

The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local inter ...


7
Todd Abbott: Flash memory with recessed floating gate. Micron Technology, Knobbe Martens Olson & Bear, July 9, 2013: US08482050

A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to a ...


8
Todd Abbott: Flash memory with recessed floating gate. Micron Technology, Knobbe Martens Olson & Bear, December 24, 2013: US08614473

A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to a ...


9
Todd Abbott: Flash memory with recessed floating gate. Knobbe Martens Olson & Bear, March 1, 2007: US20070048935-A1

A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to a ...


10
Todd Abbott, Jigish D Trivedi, Mike Violette, Chuck Dennison: Method of selectively forming local interconnects using design rules. Thorp Reed & Armstrong, August 22, 2002: US20020114180-A1

The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local inter ...