1
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method for depositing an amorphous carbon layer. Applied Materials, Moser Patterson and Sheridan, June 3, 2003: US06573030 (499 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


2
Ian S Latchford, Christopher D Bencher, Michael D Armacost, Timothy Weidman, Christopher Ngai: Airgap for semiconductor devices. Applied Materials, Moser Patterson & Sheridan, August 24, 2004: US06780753 (67 worldwide citation)

Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a dielectric material between the respective conduc ...


3
Timothy Weidman, Michael P Nault, Josephine J Chang: Capping layer for extreme low dielectric constant films. Applied Materials, Townsend and Townsend and Crew, April 5, 2005: US06875687 (46 worldwide citation)

Specific embodiments of the invention provide a silicon-carbide-type or silicon oxycarbide (also often called carbon-doped-oxide [CDO] or organosilicate glass) capping material and method for depositing this capping material on ELK films which are used as a dielectric material in integrated circuits ...


4
Timothy Weidman, Yunfeng Lu, Michael P Nault, Michael Barnes, Farhad Moghadam: Ultrasonic spray coating of liquid precursor for low K dielectric coatings. Applied Materials, Townsend and Townsend and Crew, June 24, 2003: US06583071 (46 worldwide citation)

A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequ ...


5
Nikolaos Bekiaris, Timothy Weidman, Michael D Armacost, Mehul B Naik: Method of forming a dual damascene structure utilizing a three layer hard mask structure. Applied Materials, Townsend & Townsend & Crew, June 5, 2007: US07226853 (26 worldwide citation)

A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer; depositing a second hard mask layer on the first hard mask layer; depositing a third har ...


6
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Moser Patterson & Sheridan, January 11, 2005: US06841341 (24 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


7
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Patterson and Sheridan, May 29, 2007: US07223526 (22 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


8
Timothy Weidman, Dian Sugiarto: Method and apparatus for depositing deep UV photoresist films. Applied Materials, Townsend & Townsend & Crew, March 23, 1999: US05885751 (22 worldwide citation)

An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50.degree. C. and about 200.degree. C., and plasma-polymeriz ...


9
Farhad Moghadam, Jun Zhao, Timothy Weidman, Rick J Roberts, Li Qun Xia, Alexandros T Demos: Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices. Applied Materials, Moser Patterson & Sheridan, August 30, 2005: US06936551 (18 worldwide citation)

One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.


10
Timothy Weidman, Nikolaos Bekiaris, Josephine Chang, Phong H Nguyen: Method of forming a dual damascene structure using an amorphous silicon hard mask. Applied Materials, Townsend and Townsend and Crew, October 19, 2004: US06806203 (18 worldwide citation)

A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer and depositing a second hard mask layer on the first hard mask layer, where the second ha ...