1
Dana Gronbeck Jeffrey Calvert
Michael K Gallagher, Dana A Gronbeck, Timothy G Adams, Jeffrey M Calvert: Electronic devices having air gaps. Rohm and Haas Electronic Materials, Jonathan D Baskin, May 25, 2010: US07723850 (3 worldwide citation)

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an elec ...


2
Dana Gronbeck
Dana A Gronbeck, Michael K Gallagher, Jeffrey M Calvert, Gregory P Prokopowicz, Timothy G Adams: Electronic device manufacture. Shipley Company L L C, S Matthew Cairns, March 28, 2006: US07018678 (29 worldwide citation)

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.


3
Dana Gronbeck
Michael K Gallagher, Dana A Gronbeck, Timothy G Adams, Jeffrey M Calvert: Air gap formation. Shipley Company L L C, Jonathan D Baskin, August 14, 2007: US07256127 (25 worldwide citation)

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an elec ...


4
Dana Gronbeck
Michael K Gallagher, Dana A Gronbeck, Timothy G Adams, Jeffrey M Calvert: Air gap formation. Shipley Company, Edwards & Angell, July 15, 2004: US20040137728-A1 (2 worldwide citation)

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an elec ...


5
Dana Gronbeck
Michael K Gallagher, Dana A Gronbeck, Timothy G Adams, Jeffrey M Calvert: Air gap formation. Shipley Company, Jonathan D Baskin, Rohm and Haas Electronic Materials, February 14, 2008: US20080038518-A1

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an elec ...


6
Dana Gronbeck
Dana A Gronbeck, Michael K Gallagher, Jeffrey M Calvert, Gregory P Prokopowicz, Timothy G Adams: Electronic device manufacture. Shipley Company, Edwards & Angell, February 19, 2004: US20040033700-A1

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.


7
Dana Gronbeck
Dana A Gronbeck, Michael K Gallagher, Jeffrey M Calvert, Gregory P Prokopowicz, Timothy G Adams: Electronic device manufacture. Shipley Company, S Matthew Cairns, Rohm and Haas Electronic Material, September 14, 2006: US20060204742-A1

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.


8
Dana Gronbeck
Dana A Gronbeck, Michael K Gallagher, Jeffrey M Calvert, Timothy G Adams: Electronic device manufacture. Shipley Company, Edwards & Angell, July 8, 2004: US20040130032-A1

A method for manufacturing electronic devices using multiple layers of pre-porous dielectric materials that are made porous subsequent to etching and metal filling of apertures is provided. The pre-porous layers may be made porous sequentially or during a single processing step. Such pre-porous diel ...


9
Maricela Morales
Timothy G Adams, Edward K Pavelchek, Roger F Sinta, Manuel DoCanto, Robert F Blacksmith, Peter Trefonas: Antireflective coating compositions. Shipley Company, Edwards & Angell, Dike Bronstein Roberts & Cushman IP Group, November 21, 2002: US20020172896-A1

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom lay ...


10
Dana Gronbeck
Timothy G Adams, Gregory P Prokopowicz, Dana A Gronbeck, Michael K Gallagher: Dielectric materials. Shipley Company, Edwards & Angell, June 10, 2004: US20040109950-A1

Organic polysilica materials containing one or more silicon-containing cross-linking agents having improved modulus and low dielectric constants and methods of preparing such materials are provided. These materials are useful in the manufacture of devices, such as electronic or optoelectronic device ...



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