1
Claude Louis Bertin, John A Fifield, Erik Leigh Hedberg, Russell J Houghton, Timothy Dooling Sullivan, Steven William Tomashot, William Robert Tonti: Impedance control using fuses. International Business Machines Corporation, Howard J Walker Jr esq, Scully Scott Murphy & Presser, October 31, 2000: US06141245 (65 worldwide citation)

A system and method for reducing impedance loading of semiconductor integrated circuit devices implementing protective device structures that contributes to impedance loading at an I/O pad connection. The method comprises providing a fuse device between the I/O pad connection and the protective devi ...


2
Claude Louis Bertin, Erik Leigh Hedberg, Timothy Dooling Sullivan, William Robert Tonti: Chip thermal protection device. International Business Machines Corporation, Howard J Walter Jr, Scully Scott Murphy & Presser, April 17, 2001: US06219215 (25 worldwide citation)

A gap conducting structure for an integrated electronic circuit that functions as an electronic fuse device and that is integrated as part of the semi-conductor chip wiring for providing over-current and thermal runaway protection. The gap conducting structure includes one or more air gap regions of ...


3
Claude Louis Bertin, John A Fifield, Erik Leigh Hedberg, Russell J Houghton, Timothy Dooling Sullivan, Steven William Tomashot, William Robert Tonti: Impedance control using fuses. International Business Machines Corporation, Howard J Walter Jr Esq, Scully Scott Murphy & Presser, June 5, 2001: US06243283 (16 worldwide citation)

A system and method for reducing impedance loading of semiconductor integrated circuit devices implementing protective device structures that contributes to impedance loading at an I/O pad connection. The method comprises providing a fuse device between the I/O pad connection and the protective devi ...


4
Richard Steven Kontra, Thomas John Licata, James Gardner Ryan, Timothy Dooling Sullivan: Process for depositing a conductive thin film upon an integrated circuit substrate. International Business Machines Corporation, Steven J Soucar, Dale M Crockatt, January 27, 1998: US05711858 (8 worldwide citation)

An improved process for depositing a conductive thin film upon an integrated circuit substrate by collimated sputtering is disclosed. The sputtered films are alloys of aluminum; a preferred alloying metal is magnesium. The sputtered films of the invention have a more uniform orientation of grains th ...


5
Paul Stephen Andry, Edmund Juris Sprogis, Kenneth Jay Stein, Timothy Dooling Sullivan, Cornelia Kang I Tsang, Ping Chuan Wang, Bucknell C Webb: Through-wafer vias. International Business Machines Corporation, Schmeiser Olsen & Watts, Richard M Kotulak, June 22, 2010: US07741722 (5 worldwide citation)

A through-wafer via structure and method for forming the same. The through-wafer via structure includes a wafer having an opening and a top wafer surface. The top wafer surface defines a first reference direction perpendicular to the top wafer surface. The through-wafer via structure further include ...


6
Fen Chen, Cathryn Jeanne Christiansen, Michael Anthony Shinosky, Timothy Dooling Sullivan: Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature. International Business Machines Corporation, Schmeiser Olsen & Watts, Richard M Kotulak, May 4, 2010: US07709401 (3 worldwide citation)

An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a reg ...


7
Mukta G Farooq, John A Griesemer, Gary LaFontant, William Francis Landers, Timothy Dooling Sullivan: Enhanced electromigration resistance in TSV structure and design. International Business Machines Corporation, Jason H Sosa, Katherine S Brown, October 16, 2012: US08288270 (2 worldwide citation)

The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the ...


8
Anthony Kendall Stamper, Timothy Dooling Sullivan, Ping Chuan Wang: Integration circuits for reducing electromigration effect. International Business Machines Corporation, Schmeiser Olsen & Watts, Richard M Kotulak, February 23, 2010: US07667328 (2 worldwide citation)

An integrated circuit for reducing the electromigration effect. The IC includes a substrate and a power transistor which has first and second source/drain regions. The IC further includes first, second, and third electrically conductive line segments being (i) directly above the first source/drain r ...


9
John Joseph Ellis Monaghan, Jeffrey Peter Gambino, Timothy Dooling Sullivan, Steven Howard Voldman: Structure for charge dissipation during fabrication of integrated circuits and isolation thereof. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony J Canale, February 7, 2012: US08110875 (1 worldwide citation)

A structure for dissipating charge during fabrication of an integrated circuit. The structure includes: a substrate contact in a semiconductor substrate; one or more wiring levels over the substrate; one or more electrically conductive charge dissipation structures extending from a top surface of an ...


10
Mukta G Farooq, John A Griesemer, Gary LaFontant, William Francis Landers, Timothy Dooling Sullivan: Enhanced electromigration resistance in TSV structure and design. International Business Machines Corporation, Jason H Sosa, Katherine S Brown, August 7, 2012: US08237288 (1 worldwide citation)

The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the ...