1
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer Jr, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitman Curtis Christofferson & Cook PC, Joseph P Abate, March 3, 2009: US07497959 (4 worldwide citation)

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


2
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitham Curtis & Christofferson PC, November 17, 2005: US20050255386-A1

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


3
Eb Eshun
Timothy Dalton, Ebenezer E Eshun, Sarah L Grunow, Zhong Xiang He, Anthony K Stamper: Interconnect structures and design structures for a radiofrequency integrated circuit. International Business Machines Corporation, November 22, 2012: US20120292741-A1

Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing ...


4
Lawrence A Clevenger, Stefanie R Chiras, Timothy Dalton, James J Demarest, Derren N Dunn, Chester T Dziobkowski, Philip L Flaitz, Michael W Lane, James R Lloyd, Darryl D Restaino, Thomas M Shaw, Yun Yu Wang, Chih Chao Yang: Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Robert M Trepp Esq, July 22, 2008: US07402532 (17 worldwide citation)

An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhes ...


5
Lawrence Clevenger, Timothy Dalton, Louis Hsu, Carl Radens: Intelligent wireless power charging system. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Louis J Percello Esq, September 20, 2011: US08024012 (12 worldwide citation)

A system and methodology for intelligent power management of wirelessly networked devices. The system provides for reliable wireless communication via a wireless power charging method and, a method to maintain power capacity of batteries in a wireless device. The batteries are charged via an RF harv ...


6
Kaushik Kumar, Lawrence Clevenger, Timothy Dalton, Douglas C La Tulipe, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht, Andrew H Simon, Mark Hoinkis, Steffen K Kaldor, Chih Chao Yang: Bilayered metal hardmasks for use in Dual Damascene etch schemes. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, May 30, 2006: US07052621 (11 worldwide citation)

A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue d ...


7
Louis Hsu, Timothy Dalton, Lawrence Clevenger, Carl Radens, Kwong Hon Wong, Chih Chao Yang: Method of fabricating a microelectromechanical system (MEMS) switch. International Business Machines Corporation, H Daniel Schnurmann, February 9, 2010: US07657995 (10 worldwide citation)

A method of fabricating a MEMS switch that is fully integratable in a semiconductor fabrication line. The method consists of forming two posts, each end thereof terminating in a cap; a rigid movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings bein ...


8
Kaushik Kumar, Lawrence Clevenger, Timothy Dalton, Douglas C La Tulipe, Andy Cowley, Erdem Kaltalioglu, Jochen Schacht, Andrew H Simon, Mark Hoinkis, Steffen K Kaldor, Chih Chao Yang: Bilayered metal hardmasks for use in dual damascene etch schemes. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, July 10, 2007: US07241681 (9 worldwide citation)

A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue d ...


9
Chih Chao Yang, Timothy Dalton, Lawrence Clevenger, Gerald Matusiewicz: Method of forming a MIM capacitor for Cu BEOL application. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Robert M Trepp, August 15, 2006: US07091542 (7 worldwide citation)

The present invention relates generally to integrated circuits, and particularly, but not by way of limitation, metal-insulator-metal (MIM) capacitors formed within a trench located within a metallization layer and in particular to MIM capacitors for Cu BEOL semiconductor devices.


10
Louis C Hsu, Timothy Dalton, Lawrence Clevenger, Carl Radens, Kwong Hon Wong, Chih Chao Yang: Structure and method of fabricating a hinge type MEMS switch. International Business Machines Corporation, H Daniel Schnurmann, March 25, 2008: US07348870 (7 worldwide citation)

A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in ...



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