51
Bryan C Hendrix, James J Welch, Steven M Bilodeau, Jeffrey F Roeder, Chongying Xu, Thomas H Baum: Chemical vapor deposition of high conductivity, adherent thin films of ruthenium. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, October 23, 2007: US07285308 (22 worldwide citation)

A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited ...


52
William A Wojtczak, Thomas H Baum, Long Nguyen, Cary Regulski: Polishing slurries for copper and associated materials. Advanced Technology Materials, Oliver A Zitzmann, Margaret Chappuis, Steven J Hultquist, June 25, 2002: US06409781 (22 worldwide citation)

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high ...


53
Thomas H Baum, Carl E Larson, Scott K Reynolds: Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films. International Business Machines Corporation, John A Stemwedel, Dale M Crockatt, June 15, 1993: US05220044 (21 worldwide citation)

Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.


54
Frank S Hintermaier, Thomas H Baum: Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions. Advanced Technology Materials, Margaret Chappuis, September 3, 2002: US06444264 (21 worldwide citation)

A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi


55
Peter C Van Buskirk, Jeffrey F Roeder, Steven M Bilodeau, Michael W Russell, Stephen T Johnston, Daniel J Vestyck, Thomas H Baum: Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material. Advanced Technology Materials, Robert A McLauchlan III, Oliver A Zitzmann, Steven J Hurltquist, November 13, 2001: US06316797 (19 worldwide citation)

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-fie ...


56
Ying Ma, William Wojtczak, Cary Regulski, Thomas H Baum, David D Bernhard, Deepak Verma: Chemical mechanical polishing compositions for metal and associated materials and method of using same. Advanced Technology Materials, Margaret Chappuis, Steven J Bultquist, Yongzhi Yang, April 18, 2006: US07029373 (19 worldwide citation)

A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier mater ...


57
Michael B Korzenski, Chongying Xu, Thomas H Baum, David Minsek, Eliodor G Ghenciu: Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers. Advanced Technology Materials, Margaret Chappuis, Tristan A Fuierer, Moore & Van Allen PLLC, October 10, 2006: US07119052 (18 worldwide citation)

A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to ...


58
Thomas H Baum, Paul B Comita, John R Lankard Sr, Thoams F Redmond, Thomas A Wassick, Robert L Jackson: Laser-induced chemical vapor deposition of thin-film conductors. International Business machines Corporation, Whitham & Marhoefer, September 21, 1993: US05246745 (18 worldwide citation)

Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the ...


59
Ziyun Wang, Chongying Xu, Thomas H Baum, Bryan Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films. Advanced Technology Materials, Kelly K Reynolds, Steven J Hultquist, Intellectual Property Technology Law, November 4, 2008: US07446217 (17 worldwide citation)

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative c ...


60
Thomas H Baum, David Bernhard, David Minsek, Melissa Murphy: Composition and process for wet stripping removal of sacrificial anti-reflective material. Advanced Technology Materials, Margaret Chappuis, Steven Hultquist Esq, February 1, 2005: US06849200 (16 worldwide citation)

A composition and process for wet stripping removal of sacrificial anti-reflective silicate material, e.g., from a substrate or article having such material deposited thereon, particularly where the sacrificial anti-reflective material is present with permanent silicate materials desired to be unaff ...