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Frank Hintermaier, Bryan Hendrix, Jeff Roeder, Peter Van Buskirk, Thomas H Baum: Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition. Advanced Technology Materials, Infineon Technologies Corporation, Robert A Whitman, Dexter K Chin, September 19, 2000: US06120846 (48 worldwide citation)

A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain ...


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Gautam Bhandari, Thomas H Baum: Hydrogen sensor utilizing rare earth metal thin film detection element. Advanced Technology Materials, Steven J Hultquist, Oliver A M Zitzmann, December 28, 1999: US06006582 (47 worldwide citation)

A hydrogen sensor for the detection of hydrogen, e.g., in an environment susceptible to the incursion or generation of hydrogen. The sensor includes a rare earth metal thin film arranged for exposure to the environment and exhibiting a detectable change of physical property, e.g., optical transmissi ...


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Thomas H Baum, Witold Paw: Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films. Advanced Technology Materials, Oliver A Zitzmann, Margaret Chappuis, Steven J Hultquist, June 4, 2002: US06399208 (43 worldwide citation)

A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, ...


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Ma Fatima Seijo, William A Wojtczak, David Bernhard, Thomas H Baum, David Minsek: pH buffered compositions useful for cleaning residue from semiconductor substrates. Advanced Technology Materials, Margaret Chappuis, William F Ryann, August 10, 2004: US06773873 (41 worldwide citation)

A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.


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Thomas H Baum, Carl E Larson, Scott K Reynolds: Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films. International Business Machines Corporation, John A Stemwedel, March 17, 1992: US05096737 (40 worldwide citation)

Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.


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Ying Ma, William Wojtczak, Cary Regulski, Thomas H Baum, David D Bernhard, Deepak Verma: Chemical mechanical polishing compositions for metal and associated materials and method of using same. Advanced Technology Materials, William F Ryann, Steven J Hultquist, February 17, 2004: US06692546 (39 worldwide citation)

A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier mater ...


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Thomas H Baum, Chongying Xu, Bryan C Hendrix, Jeffrey F Roeder: Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same. Advanced Technology Materials, Maggie Chappuis, Marianne Fuierer, John Boyd, February 28, 2006: US07005392 (37 worldwide citation)

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independent ...


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Peter C Van Buskirk, Frank DiMeo Jr, Peter C Kirlin, Thomas H Baum: Isotropic dry cleaning process for noble metal integrated circuit structures. Advanced Technology Materials, Steven J Hultquist, Oliver A M Zitzmann, July 3, 2001: US06254792 (35 worldwide citation)

A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composit ...


40
George R Brandes, Thomas H Baum, Michael A Tischler: Fluid storage and dispensing system. Advanced Technology Materials, Margaret Chappuis, Marianne Fuierer, December 31, 2002: US06500238 (35 worldwide citation)

A system for storage and dispensing of a sorbate fluid, in which a sorbate fluid is sorptively retained on a sorbent medium and desorption of sorbate fluid from the sorbent medium is facilitated by inputting energy to the sorbent medium including one or more of the following energy input modes: (a) ...



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