1
Ana Londergan
Ana R Londergan, Thomas E Seidel, Lawrence D Matthysse, Ed C Lee: Method and apparatus for flexible atomic layer deposition. Genus, Blakley Sokoloff Taylor & Zafman, June 14, 2005: US06905547 (36 worldwide citation)

An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier ...


2
Ana Londergan
Gi Youl Kim, Anuranjan Srivastava, Thomas E Seidel, Ana R Londergan, Sasangan Ramanathan: Transient enhanced atomic layer deposition. Aixtron, SNR Denton US, July 19, 2011: US07981473 (36 worldwide citation)

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uni ...


3
Ana Londergan
Ana R Londergan, Sasangan Ramanathan, Jereld Winkler, Thomas E Seidel: Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition. Genus, Blakely Sokoloff Taylor & Zafman, April 13, 2004: US06720259 (26 worldwide citation)

A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting ...


4
Ana Londergan
Ana R Londergan, Thomas E Seidel: Methods and procedures for engineering of composite conductive films by atomic layer deposition. Genus, Sonnenschein Nath & Rosenthal, October 31, 2006: US07129580 (6 worldwide citation)

A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer ...


5
Ana Londergan
Ana R Londergan, Thomas E Seidel: Methods and procedures for engineering of composite conductive films by atomic layer deposition. Genus, Sonnenschein Nath & Rosenthal, February 27, 2007: US07183649 (3 worldwide citation)

A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer ...


6
Ana Londergan
Ana R Londergan, Thomas E Seidel: Methods and procedures for engineering of composite conductive by atomic layer deposition. Genus, Sonnenschein Nath & Rosenthal, January 16, 2007: US07164203 (2 worldwide citation)

A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer ...


7
Ana Londergan
Ana R Londergan, Sasangan Ramanathan, Jereld Winkler, Thomas E Seidel: Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition. Blakely Sokoloff Taylor & Zafman, February 5, 2004: US20040023516-A1

A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursors used to form a second material. Subsequently when a film layer is deposited on a substrate by subjecting ...


8
Ana Londergan
Gi Youl Kim, Anuranjan Srivastava, Thomas E Seidel, Ana R Londergan, Sasangan Ramanathan: Transient enhanced atomic layer deposition. Blakely Sokoloff Taylor & Zafman, June 5, 2008: US20080131601-A1

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uni ...


9
Prasad N Gadgil, Thomas E Seidel: Vertically-stacked process reactor and cluster tool system for atomic layer deposition. Genus, Donald R Boys, March 9, 1999: US05879459 (355 worldwide citation)

A low profile, compact atomic layer deposition reactor (LP-CAR) has a low-profile body with a substrate processing region adapted to serve a single substrate or a planar array of substrates, and a valved load and unload port for substrate loading and unloading to and from the LP-CAR. The body has an ...


10
Kenneth Doering, Carl J Galewski, Prasad N Gadgil, Thomas E Seidel: Processing chamber for atomic layer deposition processes. Genus, Donald R Boys, Central Coast Patent Agency, January 16, 2001: US06174377 (286 worldwide citation)

A processing station adaptable to standard cluster tools has a vertically-translatable pedestal having an upper wafer-support surface including a heater plate adapted to be plugged into a unique feedthrough in the pedestal. At a lower position for the pedestal wafers may be transferred to and from t ...