David H Auston, Jene A Golovchenko, Thirumalai N C Venkatesan: Dual wavelength optical annealing of materials. Bell Telephone Laboratories Incorporated, Samuel H Dworetsky, Peter V D Wilde, November 18, 1980: US04234356 (62 worldwide citation)

A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the sol ...

Gary N Taylor, Thirumalai N C Venkatesan: Device lithography by selective ion implantation. Bell Telephone Laboratories Incorporated, James H Fox, March 22, 1983: US04377437 (32 worldwide citation)

A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide o ...

David H Auston, Jene A Golovchenko, Richart E Slusher, Clifford M Surko, Thirumalai N C Venkatesan: Control techniques for annealing semiconductors. Bell Telephone Laboratories Incorporated, Peter V D Wilde, May 22, 1979: US04155779 (31 worldwide citation)

Polycrystalline and amorphous semiconductors can be annealed using a laser or electron beam to restore or obtain crystal order by epitaxial regrowth on a crystal substrate. When the annealing occurs by liquid phase epitaxy, the presence and lifetime of a molten state at the region being annealed can ...

Jene A Golovchenko, Thirumalai N C Venkatesan: Annealing of uncapped compound semiconductor materials by pulsed energy deposition. Bell Telephone Laboratories Incorporated, Peter V D Wilde, May 15, 1979: US04154625 (22 worldwide citation)

Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.

Thirumalai N C Venkatesan: Optical bistable device. AT&T Bell Laboratories, Volker R Ulbrich, May 21, 1985: US04518934 (15 worldwide citation)

An optically integrated bistable device includes a semiconductor junction Fabry-Perot interferometer cavity and a pair of electrodes for applying a reverse-bias voltage to the junction to increase its light absorption. A capacitor is connected between one electrode and ground for eliminating spuriou ...

Larry E Stillwagon, Gary N Taylor, Thirumalai N C Venkatesan, Thomas M Wolf: Method with gas functionalized plasma developed layer. AT&T Bell Laboratories, James H Fox, June 1, 1993: US05215867 (12 worldwide citation)

A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defin ...

Thirumalai N C Venkatesan: Multimode electrically switched optical port. Bell Telephone Laboratories Incorporated, Sylvan Sherman, March 3, 1981: US04253728 (11 worldwide citation)

Multimode switching is obtained in a four-port device having controllable switching means (22) comprising a thin Fabry-Perot interferometer including, within the cavity, a voltage controllable absorber (35). By the appropriate dimensioning of the cavity and orientation of the incident radiation, mul ...

Stephen R Forrest, Martin L Kaplan, Paul H Schmidt, Thirumalai N C Venkatesan: Process of enhancing conductivity of material. AT&T Bell Laboratories, James Hoppes Fox, Irwin Ostroff, April 16, 1985: US04511445 (9 worldwide citation)

The conductivity of a wide range of carbon-containing materials is substantially increased by irradiation with particles having an atomic mass of at least 1. Both polymeric and nonpolymeric, organic and inorganic, materials can be used. The particulate irradiation, for example an ion beam, substanti ...