1
Dah Wen Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: Self-aligned power MOSFET device with recessed gate and source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, September 1, 1998: US05801417 (133 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


2
Dah W Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: High density power device fabrication process. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, February 1, 1994: US05283201 (116 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


3
Dah Wen Tsang, Dumitru Sdrulla, Douglas A Pike Jr, Theodore O Meyer, John W Mosier II deceased: High density power device fabrication process using undercut oxide sidewalls. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, July 15, 1997: US05648283 (84 worldwide citation)

A gate power MOSFET on substrate (20) has a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. Layer (430) on surface (28) patterns areas (446) as stripes or a matrix, and protected areas. Undercut sidewalls (444) of thickness (452), with protruding rims (447), contact the si ...


4
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Method of making topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, May 28, 1991: US05019522 (54 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


5
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger: Iopographic pattern delineated power mosfet with profile tailored recessed source. Advanced Power Technology, Marger & Johnson, January 23, 1990: US04895810 (52 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


6
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, September 3, 1991: US05045903 (46 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


7
Theodore O Meyer, Thomas E Hickman: Lightweight metal-gas battery. Ford Aerospace & Communications Corporation, Edward J Radlo, Robert D Sanborn, December 13, 1983: US04420545 (24 worldwide citation)

A new structure for a pressurized metal-gas battery is presented, with emphasis upon reducing weight and volume. Thus, the battery is particularly suitable for spacecraft applications. Positive and negative terminals are moved away from the center axis of the terminating ellipsoidal domes of a cylin ...


8
Theodore O Meyer: Profile tailored trench etch using a SF.sub.6 -O.sub.2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, January 26, 1993: US05182234 (21 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


9
Theodore O Meyer: Engineering database feedback system. LSI Logic Corporation, Luedeka Neely & Graham P C, December 24, 2002: US06499001 (10 worldwide citation)

A computerized engineering database feedback system provides special processing instructions for processing materials in a production process, and provides historical information related to the materials processed according to the special processing instructions. The system includes a request entry ...


10
Theodore O Meyer, Gerrit van Ommering: Equalizing battery cell busbar. Ford Aerospace & Communications Corporation, Edward J Radlo, Robert D Sanborn, October 25, 1983: US04411970 (5 worldwide citation)

Disclosed is a battery cell having positive and negative terminals penetrating the same end of the cell, and equalized internal resistance through all paths connecting electrode modules with the terminals. The equalized resistances insure uniform aging of electrode pairs, thus maximizing the life of ...