1
Gerd O Mueller, Regina B Mueller Mach, Michael R Krames, Peter J Schmidt, Hans Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop: Luminescent ceramic for a light emitting device. Philips Lumileds Lighting Company, Patent Law Group, Rachel V Leiterman, April 22, 2008: US07361938 (114 worldwide citation)

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength convertin ...


2
Jan De Graff, Celine Catherine Sarah Nicole, Marcus Antonius Verschuuren, Hans Van Sprang, Theo Arnold Kop, Johan Marra, Ronald Martin Wolf: Cooling device for a light-emitting semiconductor device and a method of manufacturing such a cooling device. Koninklijke Philips Electronics, December 21, 2010: US07855449 (14 worldwide citation)

A cooling device for cooling a light-emitting semiconductor device, such as a LED device (20), comprises a ceramic plate (15) having coolant-conveying channels (12) incorporated therein. The ceramic plate (15) is adapted for forming an integral part of the optical system of the light-emitting semico ...


3
Michel Paul Barbara Van Bruggen, Rolf Theo Anton Apetz, Theo Arnold Kop, Andreas Krell, Thomas Hutzler: Transparent polycrystalline aluminium oxide. Koninklijke Philips Electronics, Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung e V, July 8, 2008: US07396792 (5 worldwide citation)

The present invention relates to highly dense translucent and transparent aluminium oxide components for applications, e.g. in the lighting industry, where a fine crystal size has to be obtained and stabilized for use at temperatures of 800° C. or more. Disclosed are high-strength polycrystalline al ...


4
Jan De Graaf, Theo Arnold Kop: Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same. Koninklijke Philips Electronics, February 1, 2011: US07879258 (3 worldwide citation)

The invention relates to a phosphor in a polycrystalline ceramic structure and a light-emitting element provided with the same comprising a Light-Emitting Diode (LED) in which a composite structure of phosphor particles is embedded in a matrix, characterized in that the matrix is a ceramic composite ...


5
Jan De Graaf, Theo Arnold Kop: Phosphor in polycrystalline ceramic structure and a light-emitting element comprisng same. Philips Koninklijke, July 30, 2013: US08496852 (3 worldwide citation)

The invention relates to a phosphor in a polycrystalline ceramic structure and a light-emitting element provided with the same comprising a Light-Emitting Diode (LED) in which a composite structure of phosphor particles is embedded in a matrix, characterized in that the matrix is a ceramic composite ...


6
Gerd O Mueller, Regina B Mueller Mach, Michael R Krames, Peter J Schmidt, Hans Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop: Luminescent ceramic for a light emitting device. Lumileds, August 1, 2017: US09722148 (1 worldwide citation)

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength convertin ...


7
Gerd O Mueller, Regina B Mueller Mach, Michael R Krames, Peter J Schmidt, Hans Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop: Luminescent ceramic for a light emitting device. Lumileds, June 7, 2016: US09359260 (1 worldwide citation)

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength convertin ...


8
Egbert Jansen, Edward Anton Frederik Span, Richard Mostert, Theo Arnold Kop: Steel strip having a low Si content. TATA STEEL IJMUIDEN, Vorys Sater Seymour and Pease, July 4, 2017: US09695493

A dual phase or complex phase steel strip showing no tigerstripes. The steel strip having an ultimate tensile strength Rm classifying for 1000 MPa steel category, includes (in mass percent) C 0.09-0.19%; Mn 1.9-2.6%; Si at most 0.1%; Cr 0.4-0.8%; Mo at most 0.3%; Ni at most 0.4%; Al 0.02-1.3%; and o ...


9
Egbert Jansen, Edward Anton Frederik Span, Richard Mostert, Theo Arnold Kop: Steel strip having a low Si content. TATA STEEL IJMUIDEN, Vorys Sater Seymour and Pease, March 14, 2017: US09593400

A dual phase or complex phase steel strip showing no tigerstripes. The steel strip includes, in mass percent, the following elements: C 0.08-0.11%; Mn 1.70-2.20%; Si at most 0.1%; Cr 0.40-0.70%; Mo at most 0.3%; Ni at most 1.0%, Al 0.01-1.50%; Nb at most 0.07%; P equal to or more than 0.005%; N equa ...


10
David Neal Hanlon, Theo Arnold Kop, Stefanus Matheus Cornelis Van Bohemen: Process for producing hot-rolled steel strip. TATA STEEL IJMUIDEN, Vorys Sater Seymour and Pease, August 21, 2018: US10053757

A process for producing hot-rolled steel strip with a tensile strength of between 760 and 940 MPa and a steel produced therewith, suitable for producing parts by working such as press forming, bending or stretch flanging.