1
Dennis M Hausmann, Adrianne K Tipton, Patrick A Van Cleemput, Bunsen Nie, Francisco J Juarez, Teresa Pong: Properties of a silica thin film produced by a rapid vapor deposition (RVD) process. Novellus Systems, Beyer Weaver & Thomas, March 15, 2005: US06867152 (40 worldwide citation)

A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectr ...


2
Francisco Juarez, Dennis Hausmann, Bunsen Nie, Teresa Pong, Adrianne Tipton, Patrick Van Cleemput: Method and apparatus for modulation of precursor exposure during a pulsed deposition process. Novellus Systems, DeLio & Peterson, Peter W Peterson, April 20, 2010: US07700155 (1 worldwide citation)

A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The ...


3
Francisco Juarez, Dennis Hausmann, Bunsen Nie, Teresa Pong, Adrianne Tipton, Patrick Van Cleemput: Method and apparatus for modulation of precursor exposure during a pulsed deposition process. Novellus Systems, Law Office Of Delio & Peterson, July 8, 2010: US20100173074-A1

A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The ...