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William C Timm, Walter Y Chen, Gene A Frantz, Domingo G Garcia, Xiaolin Lu, Dennis G Mannering, Michael O Polley, Terence J Riley, Donald P Shaver, Song Wu, Alan Gatherer, Paul E Schurr, Douglas B Weiner: Multimode digital modem. Texas Instruments Incorporated, Warren L Franz, C Alan McClure, Richard L Donaldson, April 25, 2000: US06055268 (210 worldwide citation)

A modem communication system with receiving and transmission paths includes a direct equalizer system having an adaptive filter (1532) in the transmission path to compensate for frequency distortion of the communication channel. The transmitter filter coefficients are adapted by a filter coefficient ...


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Donald P Shaver, Ricky Curtis, William C Timm, Murtaza Ali, Terence J Riley, Harshal S Chhaya, Jin Meng Ho: Universal broadband home network for scalable IEEE 802.11 based wireless and wireline networking. Texas Instruments Incorporated, Abdul Zindani, W James Brady III, Frederick J Telecky Jr, September 20, 2005: US06947736 (89 worldwide citation)

The present home networking method and system is based on the IEEE 802.11 wireless networking standard expanded to encompass home phone line media communication and/or home power line media communication operation seamlessly. For each station in home network (i.e., wireless, phone line and power lin ...


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Adrian R Hartman, Terence J Riley, Peter W Shackle: High voltage dielectrically isolated solid-state switch. AT&T Bell Laboratories, David I Caplan, August 26, 1986: US04608590 (11 worldwide citation)

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region ...


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Adrian R Hartman, Terence J Riley, Peter W Shackle: High voltage solid-state switch. AT&T Bell Laboratories, David I Caplan, May 6, 1986: US04587656 (9 worldwide citation)

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first n type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region ...


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Adrian R Hartman, Terence J Riley, Peter W Shackle: Dielectrically-isolated integrated circuit complementary transistors for high voltage use. Bell Telephone Laboratories Incorporated, H W Lockhart, November 4, 1980: US04232328 (8 worldwide citation)

Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zone ...


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Joseph E Berthold, Adrian R Hartman, Terence J Riley, Peter W Shackle: High voltage dielectrically isolated remote gate solid-state switch. AT&T Bell Laboratories, David I Caplan, May 6, 1986: US04587545 (4 worldwide citation)

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region ...


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Adrian R Hartman, Bernard T Murphy, Terence J Riley, Peter W Shackle: High voltage junction solid-state switch. AT&T Bell Laboratories, David I Caplan, April 29, 1986: US04586073 (3 worldwide citation)

A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body on an n type semiconductor substrate. A p+ type anode region and an n+ type cathode region exist in portions of the semiconductor body. A second p type region of higher impurity c ...


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Adrian R Hartman, James E Kohl, William F MacPherson, Terence J Riley: Control circuitry for high voltage solid-state switches. Bell Telephone Laboratories Incorporated, Irwin Ostroff, May 8, 1984: US04447744

Control circuitry used with the combination of a control switch (typically a gated diode switch GDS) which is coupled to a control (gate) terminal of a like load switch which consists essentially of first and second p-n-p transistors. The collector of the first p-n-p transistor is coupled to an anod ...


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Donald P Shaver, Ricky Curtis, William C Timm, Murtaza Ali, Terence J Riley, Harshal S Chhaya, Jin Meng Ho: Universal broadband home network for scalable IEEE 802.11 based wireless and wireline networking. Peter Hernandez, Texas Instruments Incorporated, June 19, 2003: US20030114153-A1

The present home networking method and system is based on the IEEE 802.11 wireless networking standard expanded to encompass home phone line media communication and/or home power line media communication operation seamlessly. For each station in home network (i.e., wireless, phone line and power lin ...