1
Takashi Matsumoto, Shinichi Kazui, Hideaki Sasaki, Tateoki Miyauchi, Tatsuji Sakamoto: Laser cleavage cutting method and system. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, October 19, 1999: US05968382 (76 worldwide citation)

A cutting system for cutting a workpiece by laser emission relies upon local cooling of the workpiece at the point at which cutting starts and ends. Optionally, local cooling can also be provided at a cross point where two cutting lines intersect. Relying upon the difference in thermal stress betwee ...


2
Hiroshi Yamaguchi, Tateoki Miyauchi, Akira Shimase, Mikio Hongo: Ion beam processing apparatus and method of correcting mask defects. Hitachi, Antonelli Terry & Wands, March 5, 1985: US04503329 (75 worldwide citation)

Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature ...


3
Hiroshi Yamaguchi, Akira Shimase, Tateoki Miyauchi, Mikio Hongo: Method and apparatus for correcting delicate wiring of IC device. Hitachi, Antonelli Terry & Wands, September 2, 1986: US04609809 (68 worldwide citation)

The invention discloses a method and apparatus for correcting a device characterized in that an ion beam is extracted from an ion source having high luminance such as a liquid metal ion source or the like, the ion beam is then converged to a delicate spot by use of a charged particle optical system ...


4
Tateoki Miyauchi, Mikio Hongo, Shigenobu Maruyama, Katsurou Mizukoshi, Hiroshi Yamaguchi, Koyo Morita: Method of cutting interconnection pattern with laser and apparatus thereof. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, May 4, 1993: US05208437 (48 worldwide citation)

In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam having a pulse width of 10.sup.-9 second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redundant operation ...


5
Tateoki Miyauchi, Katsuro Mizukoshi, Mikio Hongo, Masao Mitani, Masaaki Okunaka, Takao Kawanabe, Isao Tanabe: Method and apparatus for redressing defective photomask. Hitachi, Antonelli Terry & Wands, July 31, 1984: US04463073 (43 worldwide citation)

A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light image to ther ...


6
Mikio Hongo, Masao Mitani, Tateoki Miyauchi, Masaaki Okunaka, Katsuro Mizukoshi: Method and apparatus for correcting transparent defects on a photomask. Hitachi, Antonelli Terry & Wands, April 24, 1984: US04444801 (41 worldwide citation)

A method and apparatus for correcting transparent defects on a photomask are disclosed. A metal-organic complex solution is applied to a transparent defect portion and its periphery on the photomask. The transparent defect portion is then exposed to a visible ray or ultraviolet ray to deposit a meta ...


7
Tateoki Miyauchi, Hiroshi Yamaguchi, Mikio Hongo, Katsuro Mizukoshi, Akira Shimase, Ryohei Satoh: Method and apparatus for forming film by ion beam. Hitachi, Antonelli Terry & Wands, August 18, 1987: US04687939 (40 worldwide citation)

An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the chamber. An a ...


8
Tateoki Miyauchi, Mikio Hongo, Masao Mitani, Isao Tanabe, Toshiaki Masuhara: Circuit programming by use of an electrically conductive light shield. Hitachi, Antonelli Terry & Wands, April 8, 1986: US04581628 (39 worldwide citation)

The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit pro ...


9
Hiroshi Yamaguchi, Mikio Hongo, Tateoki Miyauchi, Akira Shimase, Satoshi Haraichi, Takahiko Takahashi, Keiya Saito: IC wiring connecting method and resulting article. Hitachi, Antonelli Terry & Wands, September 19, 1989: US04868068 (38 worldwide citation)

A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plan ...


10
Tateoki Miyauchi, Jun ichi Nakabayashi, Tomoyoshi Mikoshiba: Laser working apparatus. Hitachi, Craig & Antonelli, March 14, 1978: US04079230 (33 worldwide citation)

The laser light emitted from a laser generator is cast on two prisms which have the same angle of deflection and are supported rotatably by support members so as to be rotated about the optical axis of the laser light in the opposite directions at the same speed. The laser beam scanned through the r ...