1
Nima Mokhlesi, Dengtao Zhao, Man Mui, Hao Nguyen, Seungpil Lee, Deepak Chandra Sekar, Tapan Samaddar: Multiple bit line voltages based on distance. SanDisk Corporation, Vierra Magen Marcus & DeNiro, June 23, 2009: US07551477 (48 worldwide citation)

An array of non-volatile storage elements includes a first group of non-volatile storage elements connected to a selected word line, a second group of non-volatile storage elements connected to the selected word line, a first group of bit lines in communication with the first group of non-volatile s ...


2
Andrew Horch, Tapan Samaddar: Reference cells for TCCT based memory cells. T RAM, August 24, 2004: US06781888 (23 worldwide citation)

A reference cell produces a reference current that is about half of the current produced by a memory cell. The reference cell is essentially the same as the memory cell with an additional current reduction device that can be a transistor. Adjusting a reference voltage applied to the transistor allow ...


3
Andrew Horch, Tapan Samaddar, Scott Robins: Reference cells for TCCT based memory cells. September 6, 2005: US06940772 (16 worldwide citation)

A reference cell produces a reference current that is about half of the current produced by a memory cell. The reference cell is essentially the same as the memory cell with an additional current reduction device that can be a transistor. Adjusting a reference voltage applied to the transistor allow ...


4
Tapan Samaddar: Sense amplifier based voltage comparator. T Ram, August 30, 2005: US06937085 (13 worldwide citation)

The voltage comparator of the present invention comprises a sense amplifier connected to a latch. The sense amplifier has a first input terminal for connecting to the input voltage under consideration and a second input terminal for connecting to the reference voltage. The sense amplifier generates ...


5
Andrew Horch, Tapan Samaddar, Scott Robins: Reference cells for TCCT based memory cells. T Ram, May 31, 2005: US06901021 (7 worldwide citation)

A reference cell produces a reference current that is about half of the current produced by a memory cell. The reference cell is essentially the same as the memory cell with an additional current reduction device that can be a transistor. Adjusting a reference voltage applied to the transistor allow ...


6
Nima Mokhlesi, Dengtao Zhao, Henry Chin, Tapan Samaddar: Compensation of non-volatile memory chip non-idealities by program pulse adjustment. SanDisk Corporation, Vierra Magen Marcus & DeNiro, July 12, 2011: US07978520 (5 worldwide citation)

To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can al ...


7
Andrew Horch, Tapan Samaddar: Reference cells for TCCT based memory cells. T RAM, October 17, 2006: US07123508 (3 worldwide citation)

A reference cell produces a reference current that is about half of the current produced by a memory cell. The reference cell is essentially the same as the memory cell with an additional current reduction device that can be a transistor. Adjusting a reference voltage applied to the transistor allow ...


8
Nima Mokhlesi, Dengtao Zhao, Henry Chin, Tapan Samaddar: Compensation of non-volatile memory chip non-idealities by program pulse adjustment. SanDisk Technologies, Vierra Magen Marcus, June 25, 2013: US08472255 (2 worldwide citation)

To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can al ...


9
Nima Mokhlesi, Dengtao Zhao, Henry Chin, Tapan Samaddar: Compensation of non-volatile memory chip non-idealities by program pulse adjustment. SanDisk Technologies, Vierra Magen Marcus & DeNiro, October 9, 2012: US08284609 (2 worldwide citation)

To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can al ...


10
Andrew Horch, Tapan Samaddar, Scott Robins: Reference cells for TCCT based memory cells. T RAM, June 20, 2006: US07064977 (1 worldwide citation)

A reference cell produces a reference current that is about half of the current produced by a memory cell. The reference cell is essentially the same as the memory cell with an additional current reduction device that can be a transistor. Adjusting a reference voltage applied to the transistor allow ...