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Tansu Nelson, Ee Yik Khoon, Gilchrist James F, Kumnorkaew Pisist, Arif Ronald A: Efficient light extraction method and device. Lehigh University, Tansu Nelson, Ee Yik Khoon, Gilchrist James F, Kumnorkaew Pisist, Arif Ronald A, EHRESMAN Kurt L, November 6, 2008: WO/2008/133756 (1 worldwide citation)

A tight emitting device comprises at least one p-type layer and at least one n- type layer and a microlcns array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting devi ...


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Mawst Luke J, Tansu Nelson, Nesnidal Michael P, Meassick Steven, Stiers Eric W, Hansen Darren M, Goodnough Troy J: Narrow lateral waveguide laser. Wisconsin Alumni Research Foundation, Alfalight, ENGSTROM Harry C, May 6, 2004: WO/2004/038872

An edge-emitting semiconductor laser (100) incorporating a narrow waveguide design is disclosed. The narrow waveguide (1700) expands the lateral mode size, creates a large modal spot size, and insures higher-order modes are beyond cutoff. Separate current confinement (150, 160) allows the current in ...


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Tansu Nelson, Mawst Luke J: Type ii quantum well optoelectronic devices. Wisconsin Alumni Research Foundation, ENGSTROM Harry C, April 8, 2004: WO/2004/030032

Semiconductor optoelectronic devices such as diode lasers are formed on GaAs with an active region with a GaAsN electron quantum well layer and a GaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at re ...


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TANSU NELSON: Surface plasmon dispersion engineering via double-metallic au/ag layers for nitride light-emitting diodes. LEHIGH UNIVERSITY, Simpson Mark D, June 16, 2011: WO/2011/072011

A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is ...


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TANSU NELSON: THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY. LEHIGH UNIVERISTY, Simpson Mark D, June 16, 2011: WO/2011/072014

The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and th ...


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TANSU NELSON: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. LEHIGH UNIVERSITY, Bernabeo Gregory S, July 14, 2011: WO/2011/084478

A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer ...


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