1
Toshio Sugano, Kohji Nagaoka, Seiichiro Tsukui, Yoshiaki Wakashima, Michio Tanimoto, Masayuki Watanabe, Suguru Sakaguchi, Kunihiko Nishi, Aizo Kaneda, Kohji Serizawa, Michiharu Honda, Tohru Yoshida, Takeshi Komaru, Atsushi Nakamura: Semiconductor stacked device. Hitachi, Hitachi Tobu Semiconductor, Antonelli Terry Stout & Kraus, March 30, 1993: US05198888 (173 worldwide citation)

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and ...


2
Toshio Sugano, Kohji Nagaoka, Seiichiro Tsukui, Yoshiaki Wakashima, Michio Tanimoto, Masayuki Watanabe, Suguru Sakaguchi, Kunihiko Nishi, Aizo Kaneda, Kohji Serizawa, Michiharu Honda, Tohru Yoshida, Takeshi Komaru, Atsushi Nakamura: Stacked semiconductor memory device and semiconductor memory module containing the same. Hitachi, Hitachi Tobu Semiconductor, Antonelli Terry Stout & Kraus, August 2, 1994: US05334875 (62 worldwide citation)

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and ...


3
Toshio Sugano, Kohji Nagaoka, Seiichiro Tsukui, Yoshiaki Wakashima, Michio Tanimoto, Masayuki Watanabe, Suguru Sakaguchi, Kunihiko Nishi, Aizo Kaneda, Kohji Serizawa, Michiharu Honda, Tohru Yoshida, Takeshi Komaru, Atsushi Nakamura: Semiconductor device and semiconductor module with a plurality of stacked semiconductor devices. Hitachi, HitachiTobu Semiconductor, Antonelli Terry Stout & Kraus, July 2, 1991: US05028986 (61 worldwide citation)

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and ...


4
Koji Fujisaki, Akio Nishikawa, Shunichi Numata, Hiroshi Suzuki, Takeshi Komaru, Daisuke Makino: Resin encapsulated semiconductor device. Hitachi, Hitachi Chemical, Antonelli Terry & Wands, July 19, 1988: US04758875 (59 worldwide citation)

Disclosed is a resin encapsulated semiconductor memory device comprising a semiconductor memory element, a package encapsulating the memory element and an .alpha.-rays shielding layer made from a water-resistant aromatic polyimide polymer, interposed between the memory element and the package, the a ...


5
Fusaji Shoji, Akihiro Kenmotsu, Isao Obara, Hitoshi Yokono, Takeshi Komaru: Semiconductor device. Hitachi, Antonelli Terry & Wands, April 5, 1988: US04736012 (9 worldwide citation)

A semiconductor device containing an .alpha.-rays shielding resin layer on at least active portion of a semiconductor element, said .alpha.-rays shielding resin being a special polyimide resin, is excellent in thermal resistance at the time of sealing the semiconductor element, adhesion of the .alph ...