1
Shigeo Moriyama, Yoshio Kawamura, Yoshio Homma, Kikuo Kusukawa, Takeshi Furusawa: Polishing method. Hitachi, Antonelli Terry Stout & Kraus, March 11, 1997: US05609511 (189 worldwide citation)

Disclosed is a method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing the substrate on the surface of a polishing pad and relatively moving the substrate and the polishing pad, the method comprising the steps of: detecting the position of a f ...


2
Takeshi Furusawa, Yoshimi Yamamoto: Seat belt locking device for an automobile vehicle. Fuji Kiko Kabushiki Kaisha, Thompson Birch Gauthier & Samuels, January 12, 1982: US04310176 (16 worldwide citation)

A seat belt locking device used with a seat belt arrangement for an automobile vehicle. The locking device locks the seat belt for protecting the driver or passenger from danger when the vehicle is suddenly decelerated in an emergency case such as a collision. The seat belt locking device of the pre ...


3
Takeshi Furusawa, Daisuke Ryuzaki, Noriyuki Sakuma, Shuntaro Machida, Kenji Hinode, Ryou Yoneyama: Semiconductor device and process for producing the same. Hitachi, Hitachi ULSI Systems, Mattingly Stanger & Malur P C, March 19, 2002: US06358838 (12 worldwide citation)

An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% ...


4
Takeshi Furusawa, Takao Kumihashi, Shuntaro Machida: Semiconductor device and manufacturing method thereof. Hitachi, Miles & Stockbridge P C, November 12, 2002: US06479380 (11 worldwide citation)

To provide a method for manufacturing a semiconductor device, by which it is possible to form a trench or a hole with high aspect ratio on a methylsiloxane type film with low dielectric constant with causing neither via-connection failure nor short-circuit failure even when lower level interconnect ...


5
Daisuke Ryuzaki, Takeshi Furusawa: Semiconductor manufacturing method for low-k insulating film. Hitachi, Mattingly Stanger & Malur P C, August 17, 2004: US06777325 (11 worldwide citation)

Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film ...


6
Takeshi Furusawa, Noriko Miura, Kinya Goto, Masazumi Matsuura: Semiconductor device with seal ring. Renesas Technology, Oblon Spivak McClelland Maier & Neustadt P C, October 20, 2009: US07605448 (10 worldwide citation)

A semiconductor device according to the invention is a semiconductor device which includes a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls in closed loop form in a plan view, and where ...


7
Takeshi Furusawa, Daisuke Ryuzaki, Noriyuki Sakuma, Shuntaro Machida, Kenji Hinode, Ryou Yoneyama: Semiconductor device and process for producing the same. Hitachi, Hitachi ULSI Systems, Mattingly Stanger & Malur P C, January 20, 2004: US06680541 (9 worldwide citation)

An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% ...


8
Takeshi Furusawa, Takao Kumihashi, Shuntaro Machida: Semiconductor device and manufacturing method thereof. Hitachi, Miles & Stockbridge P C, July 29, 2003: US06599830 (4 worldwide citation)

To provide a method for manufacturing a semiconductor device, by which it is possible to form a trench or a hole with high aspect ratio on a methylsiloxane type film with low dielectric constant with causing neither via-connection failure nor short-circuit failure even when lower level interconnect ...


9
Hirotaka Taniguchi, Toshiki Furutani, Takeshi Furusawa, Takashi Kariya: Wiring board with built-in electronic component and method of manufacturing same. Ibiden, Oblon Spivak McClelland Maier & Neustadt L, January 8, 2013: US08347493 (2 worldwide citation)

A method of manufacturing a wiring board with a built-in electronic component including providing a first base material having a support body and a first metal foil detachably adhered on the support body, forming a connection terminal for mounting an electronic component on the first metal foil of t ...


10
Takeshi Furusawa, Noriko Miura, Kinya Goto, Masazumi Matsuura: Semiconductor chip with seal ring and sacrificial corner pattern. Renesas Electronics Corporation, Oblon Spivak McClelland Maier & Neustadt L, September 13, 2011: US08018030 (2 worldwide citation)

A semiconductor device according to the invention is a semiconductor device which includes a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls in closed loop form in a plan view, and where ...



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